NTJS4151PT1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NTJS4151PT1
   Código: TY
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 3.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.2 V
   Qgⓘ - Carga de la puerta: 10 nC
   trⓘ - Tiempo de subida: 1700 nS
   Cossⓘ - Capacitancia de salida: 160 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
   Paquete / Cubierta: SOT-363

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NTJS4151PT1 Datasheet (PDF)

..1. Size:143K onsemi
ntjs4151p ntjs4151pt1 ntjs4151pt1g.pdf

NTJS4151PTrench Power MOSFET-20 V, -4.2 A, Single P-Channel, SC-88Features Leading Trench Technology for Low RDS(ON) Extending Battery Life http://onsemi.com SC-88 Small Outline (2x2 mm) for Maximum Circuit BoardV(BR)DSS RDS(on) Typ ID MaxUtilization, Same as SC-70-647 mW @ -4.5 V Gate Diodes for ESD Protection-20 V 70 mW @ -2.5 V -4.2 A Pb-Free Package is Avai

8.1. Size:81K onsemi
ntjs4160n-d ntjs4160nt1g.pdf

NTJS4160NPower MOSFET30 V, 3.2 A, Single N-Channel, SC-88Features Offers an Low RDS(on) Solution in the SC-88 Package Low Profile (

9.1. Size:102K onsemi
ntjs4405n.pdf

NTJS4405NSmall Signal MOSFET25 V, 1.2 A, Single, N-Channel, SC-88Features Advance Planar Technology for Fast Switching, Low RDS(on)http://onsemi.com Higher Efficiency Extending Battery LifeV(BR)DSS RDS(on) Typ ID Max Pb-Free Packages are Available249 mW @ 4.5 V25 V 1.2 AApplications299 mW @ 2.7 V Boost and Buck Converter Load Switch N-Channel Batt

9.2. Size:191K onsemi
ntjs4405n nvjs4405n.pdf

NTJS4405N, NVJS4405NMOSFET Single,N-Channel, Small Signal,SC-8825 V, 1.2 Ahttp://onsemi.comFeaturesV(BR)DSS RDS(on) Typ ID Max Advance Planar Technology for Fast Switching, Low RDS(on)249 mW @ 4.5 V Higher Efficiency Extending Battery Life25 V 1.2 A299 mW @ 2.7 V AEC-Q101 Qualified and PPAP Capable - NVJS4405N These Devices are Pb-Free and are RoHS Co

9.3. Size:126K onsemi
ntjs4405nt1 ntjs4405nt4 nvjs4405n.pdf

NTJS4405N, NVJS4405NSmall Signal MOSFET25 V, 1.2 A, Single, N-Channel, SC-88Features Advance Planar Technology for Fast Switching, Low RDS(on)http://onsemi.com Higher Efficiency Extending Battery LifeV(BR)DSS RDS(on) Typ ID Max AEC-Q101 Qualified and PPAP Capable - NVJS4405N249 mW @ 4.5 V These Devices are Pb-Free and are RoHS Compliant25 V 1.2 A299 mW @ 2.7

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