All MOSFET. NTJS4151PT1 Datasheet

 

NTJS4151PT1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTJS4151PT1
   Marking Code: TY
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 3.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 1700 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT-363

 NTJS4151PT1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTJS4151PT1 Datasheet (PDF)

 ..1. Size:143K  onsemi
 ntjs4151p ntjs4151pt1 ntjs4151pt1g.pdf

NTJS4151PT1 NTJS4151PT1

NTJS4151PTrench Power MOSFET-20 V, -4.2 A, Single P-Channel, SC-88Features Leading Trench Technology for Low RDS(ON) Extending Battery Life http://onsemi.com SC-88 Small Outline (2x2 mm) for Maximum Circuit BoardV(BR)DSS RDS(on) Typ ID MaxUtilization, Same as SC-70-647 mW @ -4.5 V Gate Diodes for ESD Protection-20 V 70 mW @ -2.5 V -4.2 A Pb-Free Package is Avai

 8.1. Size:81K  onsemi
 ntjs4160n-d ntjs4160nt1g.pdf

NTJS4151PT1 NTJS4151PT1

NTJS4160NPower MOSFET30 V, 3.2 A, Single N-Channel, SC-88Features Offers an Low RDS(on) Solution in the SC-88 Package Low Profile (

 9.1. Size:102K  onsemi
 ntjs4405n.pdf

NTJS4151PT1 NTJS4151PT1

NTJS4405NSmall Signal MOSFET25 V, 1.2 A, Single, N-Channel, SC-88Features Advance Planar Technology for Fast Switching, Low RDS(on)http://onsemi.com Higher Efficiency Extending Battery LifeV(BR)DSS RDS(on) Typ ID Max Pb-Free Packages are Available249 mW @ 4.5 V25 V 1.2 AApplications299 mW @ 2.7 V Boost and Buck Converter Load Switch N-Channel Batt

 9.2. Size:191K  onsemi
 ntjs4405n nvjs4405n.pdf

NTJS4151PT1 NTJS4151PT1

NTJS4405N, NVJS4405NMOSFET Single,N-Channel, Small Signal,SC-8825 V, 1.2 Ahttp://onsemi.comFeaturesV(BR)DSS RDS(on) Typ ID Max Advance Planar Technology for Fast Switching, Low RDS(on)249 mW @ 4.5 V Higher Efficiency Extending Battery Life25 V 1.2 A299 mW @ 2.7 V AEC-Q101 Qualified and PPAP Capable - NVJS4405N These Devices are Pb-Free and are RoHS Co

 9.3. Size:126K  onsemi
 ntjs4405nt1 ntjs4405nt4 nvjs4405n.pdf

NTJS4151PT1 NTJS4151PT1

NTJS4405N, NVJS4405NSmall Signal MOSFET25 V, 1.2 A, Single, N-Channel, SC-88Features Advance Planar Technology for Fast Switching, Low RDS(on)http://onsemi.com Higher Efficiency Extending Battery LifeV(BR)DSS RDS(on) Typ ID Max AEC-Q101 Qualified and PPAP Capable - NVJS4405N249 mW @ 4.5 V These Devices are Pb-Free and are RoHS Compliant25 V 1.2 A299 mW @ 2.7

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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