NTLJD3182FZTBG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

NTLJD3182FZPower MOSFET andSchottky Diode-20 V, -4.0 A, mCoolt Single P-Channel& Schottky Barrier Diode, ESDFeatures WDFN 2x2 mm Package with Exposed Drain Pads for Excellenthttp://onsemi.comThermal Conduction Lowest RDS(on) Solution in 2x2 mm Package P-CHANNEL MOSFET Footprint Same as SC-88 PackageV(BR)DSS RDS(on) MaxID Max Low Profile (

NTLJD3119CPower MOSFET20 V/-20 V, 4.6 A/-4.1 A, mCooltComplementary, 2x2 mm, WDFN PackageFeatures Complementary N-Channel and P-Channel MOSFET WDFN Package with Exposed Drain Pad for Excellent Thermalhttp://onsemi.comConduction Footprint Same as SC-88 PackageV(BR)DSS RDS(on) MAX ID MAX Leading Edge Trench Technology for Low On Resistance65 mW @ 4.5 V 3.8 A

NTLJD3115PPower MOSFET-20 V, -4.1 A, mCoolt Dual P-Channel,2x2 mm WDFN PackageFeatures WDFN Package Provides Exposed Drain Pad for Excellent Thermalhttp://onsemi.comConduction 2x2 mm Footprint Same as SC-88V(BR)DSS RDS(on) MAX ID MAX (Note 1) Lowest RDS(on) Solution in 2x2 mm Package100 mW @ -4.5 V 1.8 V RDS(on) Rating for Operation at Low Voltage Gate Drive

NTLJD3119CPower MOSFET20 V/-20 V, 4.6 A/-4.1 A, mCooltComplementary, 2x2 mm, WDFN PackageFeatures Complementary N-Channel and P-Channel MOSFET WDFN Package with Exposed Drain Pad for Excellent Thermalhttp://onsemi.comConduction Footprint Same as SC-88 PackageV(BR)DSS RDS(on) MAX ID MAX Leading Edge Trench Technology for Low On Resistance65 mW @ 4.5 V 3.8 A