NTLJD3182FZTBG Datasheet. Specs and Replacement

Type Designator: NTLJD3182FZTBG  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.71 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: WDFN6

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NTLJD3182FZTBG datasheet

 ..1. Size:128K  onsemi
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NTLJD3182FZTBG

NTLJD3182FZ Power MOSFET and Schottky Diode -20 V, -4.0 A, mCoolt Single P-Channel & Schottky Barrier Diode, ESD Features WDFN 2x2 mm Package with Exposed Drain Pads for Excellent http //onsemi.com Thermal Conduction Lowest RDS(on) Solution in 2x2 mm Package P-CHANNEL MOSFET Footprint Same as SC-88 Package V(BR)DSS RDS(on) Max ID Max Low Profile (... See More ⇒

 7.1. Size:127K  onsemi
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NTLJD3182FZTBG

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 7.2. Size:151K  onsemi
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NTLJD3182FZTBG

NTLJD3115P Power MOSFET -20 V, -4.1 A, mCoolt Dual P-Channel, 2x2 mm WDFN Package Features WDFN Package Provides Exposed Drain Pad for Excellent Thermal http //onsemi.com Conduction 2x2 mm Footprint Same as SC-88 V(BR)DSS RDS(on) MAX ID MAX (Note 1) Lowest RDS(on) Solution in 2x2 mm Package 100 mW @ -4.5 V 1.8 V RDS(on) Rating for Operation at Low Voltage Gate Drive ... See More ⇒

 7.3. Size:169K  onsemi
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NTLJD3182FZTBG

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Detailed specifications: NTK3134NT1G, NTK3139PT1G, NTK3142PT1G, NTLGF3402PT1G, NTLGF3501NT2G, NTLJD3119CTAG, NTLJD3119CTBG, NTLJD3182FZTAG, IRF540N, NTLJF3117PT1G, NTLJF3117PTAG, NTLJF3118NTAG, NTLJF4156NT1G, NTLJF4156NTAG, NTLJS1102PTAG, NTLJS1102PTBG, NTLJS2103PTAG

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