NTLJS3180PZTBG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTLJS3180PZTBG
Código: AA
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.7 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 3.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 VQgⓘ - Carga de la puerta: 13 nC
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 180 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.038 Ohm
Paquete / Cubierta: WDFN6
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NTLJS3180PZTBG Datasheet (PDF)
ntljs3180pz ntljs3180pztbg.pdf
NTLJS3180PZPower MOSFET-20 V, -7.7 A, mCoolt Single P-Channel,ESD, 2x2 mm WDFN PackageFeatures WDFN 2x2 mm Package with Exposed Drain Pads for Excellenthttp://onsemi.comThermal Conduction Lowest RDS(on) Solution in 2x2 mm PackageV(BR)DSS RDS(on) MAX ID MAX Footprint Same as SC-88 Package38 mW @ -4.5 V Low Profile (
ntljs3113pt1g ntljs3113ptag.pdf
NTLJS3113PPower MOSFET-20 V, -7.7 A, mCoolt Single P-Channel,2x2 mm, WDFN PackageFeatures Recommended Replacement Device - NTLUS3A40Phttp://onsemi.com WDFN Package Provides Exposed Drain Pad for Excellent ThermalConduction V(BR)DSS RDS(on) MAX ID MAX (Note 1) 2x2 mm Footprint Same as SC-88 Package40 mW @ -4.5 V Lowest RDS(on) Solution in 2x2 mm Package50 mW @
ntljs3113p.pdf
NTLJS3113PPower MOSFET-20 V, -7.7 A, mCoolt Single P-Channel,2x2 mm, WDFN PackageFeatures Recommended Replacement Device - NTLUS3A40Phttp://onsemi.com WDFN Package Provides Exposed Drain Pad for Excellent ThermalConduction V(BR)DSS RDS(on) MAX ID MAX (Note 1) 2x2 mm Footprint Same as SC-88 Package40 mW @ -4.5 V Lowest RDS(on) Solution in 2x2 mm Package50 mW @
ntljs3a18pz.pdf
NTLJS3A18PZPower MOSFET-20 V, -8.2 A, mCoolt Single P-Channel,2.0x2.0x0.8 mm WDFN PackageFeatures WDFN Package with Exposed Drain Pads for Excellent Thermalhttp://onsemi.comConduction Low Profile WDFN (2.0x2.0x0.8 mm) for Board Space SavingV(BR)DSS RDS(on) MAX ID MAX Ultra Low RDS(on)18 mW @ -4.5 V ESD Diode-Protected Gate25 mW @ -2.5 V-20 V -8.2 A T
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
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