NTLJS3180PZTBG Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NTLJS3180PZTBG
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 0.7 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 15 ns
Cossⓘ - Выходная емкость: 180 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.038 Ohm
Тип корпуса: WDFN6
NTLJS3180PZTBG Datasheet (PDF)
ntljs3180pz ntljs3180pztbg.pdf

NTLJS3180PZPower MOSFET-20 V, -7.7 A, mCoolt Single P-Channel,ESD, 2x2 mm WDFN PackageFeatures WDFN 2x2 mm Package with Exposed Drain Pads for Excellenthttp://onsemi.comThermal Conduction Lowest RDS(on) Solution in 2x2 mm PackageV(BR)DSS RDS(on) MAX ID MAX Footprint Same as SC-88 Package38 mW @ -4.5 V Low Profile (
ntljs3113pt1g ntljs3113ptag.pdf

NTLJS3113PPower MOSFET-20 V, -7.7 A, mCoolt Single P-Channel,2x2 mm, WDFN PackageFeatures Recommended Replacement Device - NTLUS3A40Phttp://onsemi.com WDFN Package Provides Exposed Drain Pad for Excellent ThermalConduction V(BR)DSS RDS(on) MAX ID MAX (Note 1) 2x2 mm Footprint Same as SC-88 Package40 mW @ -4.5 V Lowest RDS(on) Solution in 2x2 mm Package50 mW @
ntljs3113p.pdf

NTLJS3113PPower MOSFET-20 V, -7.7 A, mCoolt Single P-Channel,2x2 mm, WDFN PackageFeatures Recommended Replacement Device - NTLUS3A40Phttp://onsemi.com WDFN Package Provides Exposed Drain Pad for Excellent ThermalConduction V(BR)DSS RDS(on) MAX ID MAX (Note 1) 2x2 mm Footprint Same as SC-88 Package40 mW @ -4.5 V Lowest RDS(on) Solution in 2x2 mm Package50 mW @
ntljs3a18pz.pdf

NTLJS3A18PZPower MOSFET-20 V, -8.2 A, mCoolt Single P-Channel,2.0x2.0x0.8 mm WDFN PackageFeatures WDFN Package with Exposed Drain Pads for Excellent Thermalhttp://onsemi.comConduction Low Profile WDFN (2.0x2.0x0.8 mm) for Board Space SavingV(BR)DSS RDS(on) MAX ID MAX Ultra Low RDS(on)18 mW @ -4.5 V ESD Diode-Protected Gate25 mW @ -2.5 V-20 V -8.2 A T
Другие MOSFET... NTLJF4156NT1G , NTLJF4156NTAG , NTLJS1102PTAG , NTLJS1102PTBG , NTLJS2103PTAG , NTLJS2103PTBG , NTLJS3113PT1G , NTLJS3113PTAG , IRFB4227 , NTLJS3A18PZ , NTLJS4114NT1G , NTLJS4149PTAG , NTLJS4159NT1G , NTLLD4901NF , NTLUD3A260PZTAG , NTLUD3A260PZTBG , NTLUD3A50PZ .
History: SJMN670R80ZF
History: SJMN670R80ZF



Список транзисторов
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