All MOSFET. NTLJS3180PZTBG Datasheet

 

NTLJS3180PZTBG Datasheet and Replacement


   Type Designator: NTLJS3180PZTBG
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: WDFN6
 

 NTLJS3180PZTBG substitution

   - MOSFET ⓘ Cross-Reference Search

 

NTLJS3180PZTBG Datasheet (PDF)

 ..1. Size:117K  onsemi
ntljs3180pz ntljs3180pztbg.pdf pdf_icon

NTLJS3180PZTBG

NTLJS3180PZPower MOSFET-20 V, -7.7 A, mCoolt Single P-Channel,ESD, 2x2 mm WDFN PackageFeatures WDFN 2x2 mm Package with Exposed Drain Pads for Excellenthttp://onsemi.comThermal Conduction Lowest RDS(on) Solution in 2x2 mm PackageV(BR)DSS RDS(on) MAX ID MAX Footprint Same as SC-88 Package38 mW @ -4.5 V Low Profile (

 7.1. Size:126K  onsemi
ntljs3113pt1g ntljs3113ptag.pdf pdf_icon

NTLJS3180PZTBG

NTLJS3113PPower MOSFET-20 V, -7.7 A, mCoolt Single P-Channel,2x2 mm, WDFN PackageFeatures Recommended Replacement Device - NTLUS3A40Phttp://onsemi.com WDFN Package Provides Exposed Drain Pad for Excellent ThermalConduction V(BR)DSS RDS(on) MAX ID MAX (Note 1) 2x2 mm Footprint Same as SC-88 Package40 mW @ -4.5 V Lowest RDS(on) Solution in 2x2 mm Package50 mW @

 7.2. Size:130K  onsemi
ntljs3113p.pdf pdf_icon

NTLJS3180PZTBG

NTLJS3113PPower MOSFET-20 V, -7.7 A, mCoolt Single P-Channel,2x2 mm, WDFN PackageFeatures Recommended Replacement Device - NTLUS3A40Phttp://onsemi.com WDFN Package Provides Exposed Drain Pad for Excellent ThermalConduction V(BR)DSS RDS(on) MAX ID MAX (Note 1) 2x2 mm Footprint Same as SC-88 Package40 mW @ -4.5 V Lowest RDS(on) Solution in 2x2 mm Package50 mW @

 8.1. Size:124K  onsemi
ntljs3a18pz.pdf pdf_icon

NTLJS3180PZTBG

NTLJS3A18PZPower MOSFET-20 V, -8.2 A, mCoolt Single P-Channel,2.0x2.0x0.8 mm WDFN PackageFeatures WDFN Package with Exposed Drain Pads for Excellent Thermalhttp://onsemi.comConduction Low Profile WDFN (2.0x2.0x0.8 mm) for Board Space SavingV(BR)DSS RDS(on) MAX ID MAX Ultra Low RDS(on)18 mW @ -4.5 V ESD Diode-Protected Gate25 mW @ -2.5 V-20 V -8.2 A T

Datasheet: NTLJF4156NT1G , NTLJF4156NTAG , NTLJS1102PTAG , NTLJS1102PTBG , NTLJS2103PTAG , NTLJS2103PTBG , NTLJS3113PT1G , NTLJS3113PTAG , IRFB4227 , NTLJS3A18PZ , NTLJS4114NT1G , NTLJS4149PTAG , NTLJS4159NT1G , NTLLD4901NF , NTLUD3A260PZTAG , NTLUD3A260PZTBG , NTLUD3A50PZ .

History: NTLUS4C16N | 2SJ608 | AOCA36102E | NTLLD4901NF | DAMH300N150 | DH116N08D | SM3331PSQG

Keywords - NTLJS3180PZTBG MOSFET datasheet

 NTLJS3180PZTBG cross reference
 NTLJS3180PZTBG equivalent finder
 NTLJS3180PZTBG lookup
 NTLJS3180PZTBG substitution
 NTLJS3180PZTBG replacement

 

 
Back to Top

 


 
.