NTMFS4825NFET1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMFS4825NFET1G 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.95 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 17 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 24 nS
Cossⓘ - Capacitancia de salida: 1150 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.002 Ohm
Encapsulados: SO-8FL
📄📄 Copiar
Búsqueda de reemplazo de NTMFS4825NFET1G MOSFET
- Selecciónⓘ de transistores por parámetros
NTMFS4825NFET1G datasheet
ntmfs4825nfet1g.pdf
NTMFS4825NFE Power MOSFET 30 V, 171 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Includes Schottky Diode Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling Capability V(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Device 2.0 mW @ 10 V 171 A 30 V
ntmfs4825nfe.pdf
NTMFS4825NFE Power MOSFET 30 V, 171 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Includes Schottky Diode Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling Capability V(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Device 2.0 mW @ 10 V 171 A 30 V
ntmfs4826ne.pdf
NTMFS4826NE Power MOSFET 30 V, 66 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling Capability These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX 5.9 mW @ 10 V 66 A Applications 30 V 8.7 mW @ 4.5 V 55
ntmfs4821nt1g.pdf
NTMFS4821N Power MOSFET 30 V, 58.5 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free Device V(BR)DSS RDS(ON) MAX ID MAX Applications 6.95 mW @ 10 V Refer to Application
Otros transistores... NTMFS4121NT1G, NTMFS4122NT1G, NTMFS4701NT1G, NTMFS4707NT1G, NTMFS4708NT1G, NTMFS4744NT1G, NTMFS4821NT1G, NTMFS4823NT1G, 20N50, NTMFS4833NST1G, NTMFS4833NT1G, NTMFS4834NT1G, NTMFS4835NT1G, NTMFS4836NT1G, NTMFS4837NHT1G, NTMFS4837NT1G, NTMFS4839NHT1G
History: SVG086R5NT | NTMFS4821NT1G | SLP70R600S2
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: BCD70N07A | BCD90N03 | BCD80N06 | T50N06 | H50N06 | BCD12N65 | BCT12N65 | BCD4N65 | BCT4N65 | BCD7N65 | BCT7N65 | BCT20N65 | ASDM30P100KQ | ASDM30N90Q | ASDM30N75KQ | ASDM30N150Q
Popular searches
2n2907 equivalent | c2026 | mpsa56 transistor equivalent | 13009 transistor | irf3205 equivalent | ksa992 transistor | 2n2926 | ksa992 pinout
