NTMFS4825NFET1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMFS4825NFET1G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.95 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 17 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 24 nS
Cossⓘ - Capacitancia de salida: 1150 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.002 Ohm
Paquete / Cubierta: SO-8FL
Búsqueda de reemplazo de NTMFS4825NFET1G MOSFET
NTMFS4825NFET1G Datasheet (PDF)
ntmfs4825nfet1g.pdf

NTMFS4825NFEPower MOSFET30 V, 171 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Includes Schottky Diode Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling CapabilityV(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Device2.0 mW @ 10 V 171 A30 V
ntmfs4825nfe.pdf

NTMFS4825NFEPower MOSFET30 V, 171 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Includes Schottky Diode Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling CapabilityV(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Device2.0 mW @ 10 V 171 A30 V
ntmfs4826ne.pdf

NTMFS4826NEPower MOSFET30 V, 66 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling Capability These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX5.9 mW @ 10 V 66 AApplications30 V8.7 mW @ 4.5 V 55
ntmfs4821nt1g.pdf

NTMFS4821NPower MOSFET30 V, 58.5 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications6.95 mW @ 10 V Refer to Application
Otros transistores... NTMFS4121NT1G , NTMFS4122NT1G , NTMFS4701NT1G , NTMFS4707NT1G , NTMFS4708NT1G , NTMFS4744NT1G , NTMFS4821NT1G , NTMFS4823NT1G , IRF530 , NTMFS4833NST1G , NTMFS4833NT1G , NTMFS4834NT1G , NTMFS4835NT1G , NTMFS4836NT1G , NTMFS4837NHT1G , NTMFS4837NT1G , NTMFS4839NHT1G .
History: VS3606ATD | SSW60R130S2 | PTA04N100 | IPP16CN10N | AP9578GI-HF | QM3058M6 | CMT04N60GN252
History: VS3606ATD | SSW60R130S2 | PTA04N100 | IPP16CN10N | AP9578GI-HF | QM3058M6 | CMT04N60GN252



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