All MOSFET. NTMFS4825NFET1G Datasheet

 

NTMFS4825NFET1G Datasheet and Replacement


   Type Designator: NTMFS4825NFET1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.95 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 1150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
   Package: SO-8FL
 

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NTMFS4825NFET1G Datasheet (PDF)

 0.1. Size:104K  onsemi
 ntmfs4825nfet1g.pdf pdf_icon

NTMFS4825NFET1G

NTMFS4825NFEPower MOSFET30 V, 171 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Includes Schottky Diode Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling CapabilityV(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Device2.0 mW @ 10 V 171 A30 V

 2.1. Size:115K  onsemi
 ntmfs4825nfe.pdf pdf_icon

NTMFS4825NFET1G

NTMFS4825NFEPower MOSFET30 V, 171 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Includes Schottky Diode Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling CapabilityV(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Device2.0 mW @ 10 V 171 A30 V

 6.1. Size:116K  onsemi
 ntmfs4826ne.pdf pdf_icon

NTMFS4825NFET1G

NTMFS4826NEPower MOSFET30 V, 66 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling Capability These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX5.9 mW @ 10 V 66 AApplications30 V8.7 mW @ 4.5 V 55

 6.2. Size:137K  onsemi
 ntmfs4821nt1g.pdf pdf_icon

NTMFS4825NFET1G

NTMFS4821NPower MOSFET30 V, 58.5 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications6.95 mW @ 10 V Refer to Application

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Datasheet: NTMFS4121NT1G , NTMFS4122NT1G , NTMFS4701NT1G , NTMFS4707NT1G , NTMFS4708NT1G , NTMFS4744NT1G , NTMFS4821NT1G , NTMFS4823NT1G , IRF530 , NTMFS4833NST1G , NTMFS4833NT1G , NTMFS4834NT1G , NTMFS4835NT1G , NTMFS4836NT1G , NTMFS4837NHT1G , NTMFS4837NT1G , NTMFS4839NHT1G .

History: 2SK4057-S27-AY | AOW360A70 | IRFIZ44G | DH012N03P | 2SK3535-01 | STD95N04

Keywords - NTMFS4825NFET1G MOSFET datasheet

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