NTMS4101PR2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NTMS4101PR2
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.38 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 6.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 0.45 V
   Qgⓘ - Carga de la puerta: 29.5 nC
   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 320 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.019 Ohm
   Paquete / Cubierta: SO-8

Búsqueda de reemplazo de MOSFET NTMS4101PR2

NTMS4101PR2 Datasheet (PDF)

..1. Size:166K onsemi
ntms4101pr2.pdf

NTMS4101PTrench Power MOSFET20 V, 9.0 A, Single P-Channel, SO-8Features Leading -20 V Trench for Low RDS(on) Surface Mount SO-8 Package Saves Board Spacehttp://onsemi.com Lead-Free Package for Green Manufacturing (G Suffix)Applications Power ManagementV(BR)DSS RDS(on) TYP ID MAX Load Switch16 mW @ -4.5 V Battery Protection-20 V -9.0 A22 mW @ -2.5

7.1. Size:72K onsemi
ntms4107n-d ntms4107nr2g.pdf

NTMS4107NPower MOSFET30 V, 18 A, Single N-Channel, SO-8Features Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG Optimized for Low Side Synchronous Applicationshttp://onsemi.com High Speed Switching Capability Pb-Free Package is AvailableV(BR)DSS RDS(on) TYP ID MAX3.4 mW @ 10 VApplications30 V 18 A Notebook Computer Vcore Applications4.7

8.1. Size:86K onsemi
ntms4176p ntms4176pr2g.pdf

NTMS4176PPower MOSFET-30 V, -9.6 A, P-Channel, SOIC-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(on) MaxID Max This is a Pb-Free Device18 mW @ -10 V-30 V -9.6 AApplications30 m

8.2. Size:86K onsemi
ntms4177p ntms4177pr2g.pdf

NTMS4177PPower MOSFET-30 V, -11.4 A, P-Channel, SOIC-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(on) MaxID Max This is a Pb-Free Device12 mW @ -10 V-30 V -11.4 AApplications19

8.3. Size:86K onsemi
ntms4177p.pdf

8.4. Size:853K cn vbsemi
ntms4177pr.pdf

NTMS4177PRwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Available0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET- 30 22 nC 100 % Rg Tested0.0180 at VGS = - 4.5 V - 10 100 % UIS TestedAPPLICATIONS Load SwitchesS - Notebook PCsSO-8- Desktop P

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