All MOSFET. NTMS4101PR2 Datasheet

 

NTMS4101PR2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTMS4101PR2
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.45 V
   |Id|ⓘ - Maximum Drain Current: 6.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 29.5 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
   Package: SO-8

 NTMS4101PR2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTMS4101PR2 Datasheet (PDF)

 ..1. Size:166K  onsemi
 ntms4101pr2.pdf

NTMS4101PR2 NTMS4101PR2

NTMS4101PTrench Power MOSFET20 V, 9.0 A, Single P-Channel, SO-8Features Leading -20 V Trench for Low RDS(on) Surface Mount SO-8 Package Saves Board Spacehttp://onsemi.com Lead-Free Package for Green Manufacturing (G Suffix)Applications Power ManagementV(BR)DSS RDS(on) TYP ID MAX Load Switch16 mW @ -4.5 V Battery Protection-20 V -9.0 A22 mW @ -2.5

 7.1. Size:72K  onsemi
 ntms4107n-d ntms4107nr2g.pdf

NTMS4101PR2 NTMS4101PR2

NTMS4107NPower MOSFET30 V, 18 A, Single N-Channel, SO-8Features Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG Optimized for Low Side Synchronous Applicationshttp://onsemi.com High Speed Switching Capability Pb-Free Package is AvailableV(BR)DSS RDS(on) TYP ID MAX3.4 mW @ 10 VApplications30 V 18 A Notebook Computer Vcore Applications4.7

 8.1. Size:86K  onsemi
 ntms4176p ntms4176pr2g.pdf

NTMS4101PR2 NTMS4101PR2

NTMS4176PPower MOSFET-30 V, -9.6 A, P-Channel, SOIC-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(on) MaxID Max This is a Pb-Free Device18 mW @ -10 V-30 V -9.6 AApplications30 m

 8.2. Size:86K  onsemi
 ntms4177p ntms4177pr2g.pdf

NTMS4101PR2 NTMS4101PR2

NTMS4177PPower MOSFET-30 V, -11.4 A, P-Channel, SOIC-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(on) MaxID Max This is a Pb-Free Device12 mW @ -10 V-30 V -11.4 AApplications19

 8.3. Size:86K  onsemi
 ntms4177p.pdf

NTMS4101PR2 NTMS4101PR2

NTMS4177PPower MOSFET-30 V, -11.4 A, P-Channel, SOIC-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(on) MaxID Max This is a Pb-Free Device12 mW @ -10 V-30 V -11.4 AApplications19

 8.4. Size:853K  cn vbsemi
 ntms4177pr.pdf

NTMS4101PR2 NTMS4101PR2

NTMS4177PRwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Available0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET- 30 22 nC 100 % Rg Tested0.0180 at VGS = - 4.5 V - 10 100 % UIS TestedAPPLICATIONS Load SwitchesS - Notebook PCsSO-8- Desktop P

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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