NTMS4101PR2 Datasheet. Specs and Replacement
Type Designator: NTMS4101PR2 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 6.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 320 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
Package: SO-8
NTMS4101PR2 substitution
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NTMS4101PR2 datasheet
ntms4101pr2.pdf
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ntms4176p ntms4176pr2g.pdf
NTMS4176P Power MOSFET -30 V, -9.6 A, P-Channel, SOIC-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board Space V(BR)DSS RDS(on) Max ID Max This is a Pb-Free Device 18 mW @ -10 V -30 V -9.6 A Applications 30 m... See More ⇒
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NTMS4177P Power MOSFET -30 V, -11.4 A, P-Channel, SOIC-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board Space V(BR)DSS RDS(on) Max ID Max This is a Pb-Free Device 12 mW @ -10 V -30 V -11.4 A Applications 19... See More ⇒
Detailed specifications: NTMFS5C612NL, NTMFS5C646NL, NTMFS5C670NL, NTMFS6B03N, NTMFS6B05N, NTMFS6B14N, NTMS10P02R2G, NTMS3P03R2, AON6380, NTMS4107NR2G, NTMS4176PR2G, NTMS4177PR2G, NTMS4404NR2, NTMS4503NR2, NTMS4700NR2, NTMS4705NR2G, NTMS4706NR2
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