NTMS4101PR2 datasheet, подбор замены

 ..1. Size:166K  onsemi
 ntms4101pr2.pdf 

NTMS4101P Trench Power MOSFET 20 V, 9.0 A, Single P-Channel, SO-8 Features Leading -20 V Trench for Low RDS(on) Surface Mount SO-8 Package Saves Board Space http //onsemi.com Lead-Free Package for Green Manufacturing (G Suffix) Applications Power Management V(BR)DSS RDS(on) TYP ID MAX Load Switch 16 mW @ -4.5 V Battery Protection -20 V -9.0 A 22 mW @ -2.5

 7.1. Size:72K  onsemi
 ntms4107n-d ntms4107nr2g.pdf 

NTMS4107N Power MOSFET 30 V, 18 A, Single N-Channel, SO-8 Features Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG Optimized for Low Side Synchronous Applications http //onsemi.com High Speed Switching Capability Pb-Free Package is Available V(BR)DSS RDS(on) TYP ID MAX 3.4 mW @ 10 V Applications 30 V 18 A Notebook Computer Vcore Applications 4.7

 8.1. Size:86K  onsemi
 ntms4176p ntms4176pr2g.pdf 

NTMS4176P Power MOSFET -30 V, -9.6 A, P-Channel, SOIC-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board Space V(BR)DSS RDS(on) Max ID Max This is a Pb-Free Device 18 mW @ -10 V -30 V -9.6 A Applications 30 m

 8.2. Size:86K  onsemi
 ntms4177p ntms4177pr2g.pdf 

NTMS4177P Power MOSFET -30 V, -11.4 A, P-Channel, SOIC-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board Space V(BR)DSS RDS(on) Max ID Max This is a Pb-Free Device 12 mW @ -10 V -30 V -11.4 A Applications 19

 8.3. Size:86K  onsemi
 ntms4177p.pdf 

NTMS4177P Power MOSFET -30 V, -11.4 A, P-Channel, SOIC-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board Space V(BR)DSS RDS(on) Max ID Max This is a Pb-Free Device 12 mW @ -10 V -30 V -11.4 A Applications 19

 8.4. Size:853K  cn vbsemi
 ntms4177pr.pdf 

NTMS4177PR www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Available 0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET - 30 22 nC 100 % Rg Tested 0.0180 at VGS = - 4.5 V - 10 100 % UIS Tested APPLICATIONS Load Switches S - Notebook PCs SO-8 - Desktop P