NTMS4101PR2 - параметры транзистора MOSFET, его аналоги, datasheet

NTMS4101PR2 Datasheet (PDF)

..1. Size:166K onsemi
ntms4101pr2.pdf pdf_icon

NTMS4101PTrench Power MOSFET20 V, 9.0 A, Single P-Channel, SO-8Features Leading -20 V Trench for Low RDS(on) Surface Mount SO-8 Package Saves Board Spacehttp://onsemi.com Lead-Free Package for Green Manufacturing (G Suffix)Applications Power ManagementV(BR)DSS RDS(on) TYP ID MAX Load Switch16 mW @ -4.5 V Battery Protection-20 V -9.0 A22 mW @ -2.5

7.1. Size:72K onsemi
ntms4107n-d ntms4107nr2g.pdf pdf_icon

NTMS4107NPower MOSFET30 V, 18 A, Single N-Channel, SO-8Features Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG Optimized for Low Side Synchronous Applicationshttp://onsemi.com High Speed Switching Capability Pb-Free Package is AvailableV(BR)DSS RDS(on) TYP ID MAX3.4 mW @ 10 VApplications30 V 18 A Notebook Computer Vcore Applications4.7

8.1. Size:86K onsemi
ntms4176p ntms4176pr2g.pdf pdf_icon

NTMS4176PPower MOSFET-30 V, -9.6 A, P-Channel, SOIC-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(on) MaxID Max This is a Pb-Free Device18 mW @ -10 V-30 V -9.6 AApplications30 m

8.2. Size:86K onsemi
ntms4177p ntms4177pr2g.pdf pdf_icon

NTMS4177PPower MOSFET-30 V, -11.4 A, P-Channel, SOIC-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(on) MaxID Max This is a Pb-Free Device12 mW @ -10 V-30 V -11.4 AApplications19