NTMS4177PR2G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTMS4177PR2G  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.84 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 550 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm

Encapsulados: SOIC-8

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NTMS4177PR2G datasheet

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 ntms4177p ntms4177pr2g.pdf pdf_icon

NTMS4177PR2G

NTMS4177P Power MOSFET -30 V, -11.4 A, P-Channel, SOIC-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board Space V(BR)DSS RDS(on) Max ID Max This is a Pb-Free Device 12 mW @ -10 V -30 V -11.4 A Applications 19

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NTMS4177PR2G

NTMS4177PR www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Available 0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET - 30 22 nC 100 % Rg Tested 0.0180 at VGS = - 4.5 V - 10 100 % UIS Tested APPLICATIONS Load Switches S - Notebook PCs SO-8 - Desktop P

 5.1. Size:86K  onsemi
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NTMS4177PR2G

NTMS4177P Power MOSFET -30 V, -11.4 A, P-Channel, SOIC-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board Space V(BR)DSS RDS(on) Max ID Max This is a Pb-Free Device 12 mW @ -10 V -30 V -11.4 A Applications 19

 7.1. Size:86K  onsemi
 ntms4176p ntms4176pr2g.pdf pdf_icon

NTMS4177PR2G

NTMS4176P Power MOSFET -30 V, -9.6 A, P-Channel, SOIC-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board Space V(BR)DSS RDS(on) Max ID Max This is a Pb-Free Device 18 mW @ -10 V -30 V -9.6 A Applications 30 m

MOSTRAR MÁS

Otros transistores... NTMFS6B03N, NTMFS6B05N, NTMFS6B14N, NTMS10P02R2G, NTMS3P03R2, NTMS4101PR2, NTMS4107NR2G, NTMS4176PR2G, NCEP15T14, NTMS4404NR2, NTMS4503NR2, NTMS4700NR2, NTMS4705NR2G, NTMS4706NR2, NTMS4706NR2G, NTMS4800NR2G, NTMS4801NR2G