NTMS4177PR2G - параметры транзистора MOSFET, его аналоги, datasheet

NTMS4177PR2G Datasheet (PDF)

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NTMS4177PPower MOSFET-30 V, -11.4 A, P-Channel, SOIC-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(on) MaxID Max This is a Pb-Free Device12 mW @ -10 V-30 V -11.4 AApplications19

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NTMS4177PRwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Available0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET- 30 22 nC 100 % Rg Tested0.0180 at VGS = - 4.5 V - 10 100 % UIS TestedAPPLICATIONS Load SwitchesS - Notebook PCsSO-8- Desktop P

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7.1. Size:86K onsemi
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NTMS4176PPower MOSFET-30 V, -9.6 A, P-Channel, SOIC-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(on) MaxID Max This is a Pb-Free Device18 mW @ -10 V-30 V -9.6 AApplications30 m

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