All MOSFET. NTMS4177PR2G Datasheet

 

NTMS4177PR2G Datasheet and Replacement


   Type Designator: NTMS4177PR2G
   Marking Code: 4177P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.84 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 6.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 29 nC
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 550 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: SOIC-8
 

 NTMS4177PR2G substitution

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NTMS4177PR2G Datasheet (PDF)

 ..1. Size:86K  onsemi
 ntms4177p ntms4177pr2g.pdf pdf_icon

NTMS4177PR2G

NTMS4177PPower MOSFET-30 V, -11.4 A, P-Channel, SOIC-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(on) MaxID Max This is a Pb-Free Device12 mW @ -10 V-30 V -11.4 AApplications19

 4.1. Size:853K  cn vbsemi
 ntms4177pr.pdf pdf_icon

NTMS4177PR2G

NTMS4177PRwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Available0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET- 30 22 nC 100 % Rg Tested0.0180 at VGS = - 4.5 V - 10 100 % UIS TestedAPPLICATIONS Load SwitchesS - Notebook PCsSO-8- Desktop P

 5.1. Size:86K  onsemi
 ntms4177p.pdf pdf_icon

NTMS4177PR2G

NTMS4177PPower MOSFET-30 V, -11.4 A, P-Channel, SOIC-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(on) MaxID Max This is a Pb-Free Device12 mW @ -10 V-30 V -11.4 AApplications19

 7.1. Size:86K  onsemi
 ntms4176p ntms4176pr2g.pdf pdf_icon

NTMS4177PR2G

NTMS4176PPower MOSFET-30 V, -9.6 A, P-Channel, SOIC-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(on) MaxID Max This is a Pb-Free Device18 mW @ -10 V-30 V -9.6 AApplications30 m

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History: IRFH6200

Keywords - NTMS4177PR2G MOSFET datasheet

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