NTMS4873NFR2G Todos los transistores

 

NTMS4873NFR2G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTMS4873NFR2G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.87 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3.8 nS
   Cossⓘ - Capacitancia de salida: 345 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
   Paquete / Cubierta: SO-8
 

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NTMS4873NFR2G Datasheet (PDF)

 ..1. Size:115K  onsemi
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NTMS4873NFR2G

NTMS4873NFPower MOSFET30 V, 11.5 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Includes SyncFET Schottky Diodehttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(ON) MAX ID MAX This is a Pb-Free Device12 mW @ 10 V

 7.1. Size:112K  onsemi
ntms4872n-d ntms4872nr2g.pdf pdf_icon

NTMS4873NFR2G

NTMS4872NPower MOSFET30 V, 10.2 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(ON) MAX ID MAX This is a Pb-Free Device13.5 mW @ 10 VApplications30 V 10.2 A Disk

 8.1. Size:88K  onsemi
ntms4807n-d ntms4807nr2g.pdf pdf_icon

NTMS4873NFR2G

NTMS4807NPower MOSFET30 V, 14.8 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com This is a Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications6.1 mW @ 10 V Disk Drives30 V 14.8 A DC-DC Converters 7.5 mW @ 4.5 V Pri

 8.2. Size:106K  onsemi
ntms4816nr2g.pdf pdf_icon

NTMS4873NFR2G

NTMS4816N, NVMS4816NPower MOSFET30 V, 11 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com AEC-Q101 Qualified and PPAP Capable - NVMS4816N These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXApplications10

Otros transistores... NTMS4706NR2 , NTMS4706NR2G , NTMS4800NR2G , NTMS4801NR2G , NTMS4802NR2G , NTMS4807NR2G , NTMS4816NR2G , NTMS4872NR2G , SKD502T , NTMS4916NR2G , NTMS4917NR2G , NTMS4937NR2G , NTMS4939NR2G , NTMS4N01R2G , NTMS4P01R2 , NTMS5835NLR2G , NTMS5838NLR2G .

History: MTP2N50 | SiS412DN | IRF7463 | R6006KND3 | WMM030N06HG4 | NCEP02T11D

 

 
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