NTMS4873NFR2G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMS4873NFR2G 📄📄
Código: 4873NF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.87 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 7.1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
Qgⓘ - Carga de la puerta: 10.5 nC
trⓘ - Tiempo de subida: 3.8 nS
Cossⓘ - Capacitancia de salida: 345 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
Encapsulados: SO-8
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NTMS4873NFR2G datasheet
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NTMS4873NF Power MOSFET 30 V, 11.5 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Includes SyncFET Schottky Diode http //onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board Space V(BR)DSS RDS(ON) MAX ID MAX This is a Pb-Free Device 12 mW @ 10 V
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NTMS4816N, NVMS4816N Power MOSFET 30 V, 11 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com AEC-Q101 Qualified and PPAP Capable - NVMS4816N These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 10
Otros transistores... NTMS4706NR2, NTMS4706NR2G, NTMS4800NR2G, NTMS4801NR2G, NTMS4802NR2G, NTMS4807NR2G, NTMS4816NR2G, NTMS4872NR2G, RFP50N06, NTMS4916NR2G, NTMS4917NR2G, NTMS4937NR2G, NTMS4939NR2G, NTMS4N01R2G, NTMS4P01R2, NTMS5835NLR2G, NTMS5838NLR2G
History: ZXM61P02FTC | ZXMN4A06KTC | NTMS4939NR2G
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