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NTMS4873NFR2G Spec and Replacement


   Type Designator: NTMS4873NFR2G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.87 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.8 nS
   Cossⓘ - Output Capacitance: 345 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: SO-8

 NTMS4873NFR2G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTMS4873NFR2G Specs

 ..1. Size:115K  onsemi
ntms4873nf-d ntms4873nfr2g.pdf pdf_icon

NTMS4873NFR2G

NTMS4873NF Power MOSFET 30 V, 11.5 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Includes SyncFET Schottky Diode http //onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board Space V(BR)DSS RDS(ON) MAX ID MAX This is a Pb-Free Device 12 mW @ 10 V ... See More ⇒

 7.1. Size:112K  onsemi
ntms4872n-d ntms4872nr2g.pdf pdf_icon

NTMS4873NFR2G

NTMS4872N Power MOSFET 30 V, 10.2 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board Space V(BR)DSS RDS(ON) MAX ID MAX This is a Pb-Free Device 13.5 mW @ 10 V Applications 30 V 10.2 A Disk... See More ⇒

 8.1. Size:88K  onsemi
ntms4807n-d ntms4807nr2g.pdf pdf_icon

NTMS4873NFR2G

NTMS4807N Power MOSFET 30 V, 14.8 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com This is a Pb-Free Device V(BR)DSS RDS(ON) MAX ID MAX Applications 6.1 mW @ 10 V Disk Drives 30 V 14.8 A DC-DC Converters 7.5 mW @ 4.5 V Pri... See More ⇒

 8.2. Size:106K  onsemi
ntms4816nr2g.pdf pdf_icon

NTMS4873NFR2G

NTMS4816N, NVMS4816N Power MOSFET 30 V, 11 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com AEC-Q101 Qualified and PPAP Capable - NVMS4816N These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 10 ... See More ⇒

Detailed specifications: NTMS4706NR2 , NTMS4706NR2G , NTMS4800NR2G , NTMS4801NR2G , NTMS4802NR2G , NTMS4807NR2G , NTMS4816NR2G , NTMS4872NR2G , RFP50N06 , NTMS4916NR2G , NTMS4917NR2G , NTMS4937NR2G , NTMS4939NR2G , NTMS4N01R2G , NTMS4P01R2 , NTMS5835NLR2G , NTMS5838NLR2G .

History: ZXM64N02XTA

Keywords - NTMS4873NFR2G MOSFET specs

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