NTMS5P02R2G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTMS5P02R2G  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.79 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 3.95 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 25 nS

Cossⓘ - Capacitancia de salida: 510 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.033 Ohm

Encapsulados: SOIC-8

  📄📄 Copiar 

 Búsqueda de reemplazo de NTMS5P02R2G MOSFET

- Selecciónⓘ de transistores por parámetros

 

NTMS5P02R2G datasheet

 ..1. Size:121K  onsemi
 ntms5p02r2 ntms5p02r2g ntms5p02r2sg.pdf pdf_icon

NTMS5P02R2G

NTMS5P02R2 Power MOSFET -5.4 Amps, -20 Volts P-Channel Enhancement-Mode Single SOIC-8 Package http //onsemi.com Features VDSS RDS(ON) TYP ID MAX High Density Power MOSFET with Ultra Low RDS(on) Providing Higher Efficiency -20 V 26 mW @ -4.5 V -5.4 A Miniature SOIC-8 Surface Mount Package - Saves Board Space Diode Exhibits High Speed with Soft Recovery IDSS Specifie

 6.1. Size:134K  onsemi
 ntms5p02 nvms5p02.pdf pdf_icon

NTMS5P02R2G

NTMS5P02, NVMS5P02 MOSFET Power, Single, P-Channel, Enhancement Mode, SOIC-8 -5.4 A, -20 V http //onsemi.com Features VDSS RDS(ON) TYP ID MAX High Density Power MOSFET with Ultra Low RDS(on) Providing Higher Efficiency -20 V 26 mW @ -4.5 V -5.4 A Miniature SOIC-8 Surface Mount Package - Saves Board Space Diode Exhibits High Speed with Soft Recovery IDSS Specifi

 9.1. Size:105K  onsemi
 ntms5838nlr2g.pdf pdf_icon

NTMS5P02R2G

NTMS5838NL Power MOSFET 40 V, 7.5 A, 20 mW Features Low RDS(on) Low Capacitance http //onsemi.com Optimized Gate Charge These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) 20 mW @ 10 V 40 V 7.5 A Parameter Symbol Value Unit 36.5 mW @ 4.5 V Drain-to-Source Voltage

 9.2. Size:105K  onsemi
 ntms5835nlr2g.pdf pdf_icon

NTMS5P02R2G

NTMS5835NL Power MOSFET 40 V, 12 A, 10 mW Features Low RDS(on) Low Capacitance http //onsemi.com Optimized Gate Charge These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) 10 mW @ 10 V 40 V 12 A Parameter Symbol Value Unit 14 mW @ 4.5 V Drain-to-Source Voltage VDSS

MOSTRAR MÁS

Otros transistores... NTMS4916NR2G, NTMS4917NR2G, NTMS4937NR2G, NTMS4939NR2G, NTMS4N01R2G, NTMS4P01R2, NTMS5835NLR2G, NTMS5838NLR2G, 2N60, NTMS5P02R2SG, NTMS7N03R2G, NTMSD2P102LR2, NTMSD3P102R2, NTMSD6N303R2, NTNS3164NZ, NTNS3193NZ, NTNS3A65PZ