NTMS5P02R2G
MOSFET. Datasheet pdf. Equivalent
Type Designator: NTMS5P02R2G
Marking Code: E5P02
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.79
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.25
V
|Id|ⓘ - Maximum Drain Current: 3.95
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 20
nC
trⓘ - Rise Time: 25
nS
Cossⓘ -
Output Capacitance: 510
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.033
Ohm
Package:
SOIC-8
NTMS5P02R2G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTMS5P02R2G
Datasheet (PDF)
..1. Size:121K onsemi
ntms5p02r2 ntms5p02r2g ntms5p02r2sg.pdf 
NTMS5P02R2Power MOSFET-5.4 Amps, -20 VoltsP-Channel Enhancement-ModeSingle SOIC-8 Packagehttp://onsemi.comFeaturesVDSS RDS(ON) TYP ID MAX High Density Power MOSFET with Ultra Low RDS(on)Providing Higher Efficiency-20 V26 mW @ -4.5 V -5.4 A Miniature SOIC-8 Surface Mount Package - Saves Board Space Diode Exhibits High Speed with Soft Recovery IDSS Specifie
6.1. Size:134K onsemi
ntms5p02 nvms5p02.pdf
NTMS5P02, NVMS5P02MOSFET Power, Single,P-Channel, EnhancementMode, SOIC-8-5.4 A, -20 Vhttp://onsemi.comFeaturesVDSS RDS(ON) TYP ID MAX High Density Power MOSFET with Ultra Low RDS(on)Providing Higher Efficiency-20 V26 mW @ -4.5 V -5.4 A Miniature SOIC-8 Surface Mount Package - Saves Board Space Diode Exhibits High Speed with Soft Recovery IDSS Specifi
9.1. Size:105K onsemi
ntms5838nlr2g.pdf
NTMS5838NLPower MOSFET40 V, 7.5 A, 20 mWFeatures Low RDS(on) Low Capacitancehttp://onsemi.com Optimized Gate Charge These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise stated)20 mW @ 10 V40 V 7.5 AParameter Symbol Value Unit36.5 mW @ 4.5 VDrain-to-Source Voltage
9.2. Size:105K onsemi
ntms5835nlr2g.pdf
NTMS5835NLPower MOSFET40 V, 12 A, 10 mWFeatures Low RDS(on) Low Capacitancehttp://onsemi.com Optimized Gate Charge These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise stated)10 mW @ 10 V40 V 12 AParameter Symbol Value Unit14 mW @ 4.5 VDrain-to-Source Voltage VDSS
9.3. Size:116K onsemi
ntms5835nl.pdf
NTMS5835NLPower MOSFET40 V, 12 A, 10 mWFeatures Low RDS(on) Low Capacitancehttp://onsemi.com Optimized Gate Charge These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise stated)10 mW @ 10 V40 V 12 AParameter Symbol Value Unit14 mW @ 4.5 VDrain-to-Source Voltage VDSS
9.4. Size:115K onsemi
ntms5838nl.pdf
NTMS5838NLPower MOSFET40 V, 7.5 A, 25 mWFeatures Low RDS(on) Low Capacitancehttp://onsemi.com Optimized Gate Charge These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise stated)25 mW @ 10 V40 V 7.5 AParameter Symbol Value Unit30.8 mW @ 4.5 VDrain-to-Source Voltage
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