NTMS5P02R2G Datasheet. Specs and Replacement

Type Designator: NTMS5P02R2G  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.79 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 3.95 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 510 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm

Package: SOIC-8

NTMS5P02R2G substitution

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NTMS5P02R2G datasheet

 ..1. Size:121K  onsemi
 ntms5p02r2 ntms5p02r2g ntms5p02r2sg.pdf pdf_icon

NTMS5P02R2G

NTMS5P02R2 Power MOSFET -5.4 Amps, -20 Volts P-Channel Enhancement-Mode Single SOIC-8 Package http //onsemi.com Features VDSS RDS(ON) TYP ID MAX High Density Power MOSFET with Ultra Low RDS(on) Providing Higher Efficiency -20 V 26 mW @ -4.5 V -5.4 A Miniature SOIC-8 Surface Mount Package - Saves Board Space Diode Exhibits High Speed with Soft Recovery IDSS Specifie... See More ⇒

 6.1. Size:134K  onsemi
 ntms5p02 nvms5p02.pdf pdf_icon

NTMS5P02R2G

NTMS5P02, NVMS5P02 MOSFET Power, Single, P-Channel, Enhancement Mode, SOIC-8 -5.4 A, -20 V http //onsemi.com Features VDSS RDS(ON) TYP ID MAX High Density Power MOSFET with Ultra Low RDS(on) Providing Higher Efficiency -20 V 26 mW @ -4.5 V -5.4 A Miniature SOIC-8 Surface Mount Package - Saves Board Space Diode Exhibits High Speed with Soft Recovery IDSS Specifi... See More ⇒

 9.1. Size:105K  onsemi
 ntms5838nlr2g.pdf pdf_icon

NTMS5P02R2G

NTMS5838NL Power MOSFET 40 V, 7.5 A, 20 mW Features Low RDS(on) Low Capacitance http //onsemi.com Optimized Gate Charge These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) 20 mW @ 10 V 40 V 7.5 A Parameter Symbol Value Unit 36.5 mW @ 4.5 V Drain-to-Source Voltage ... See More ⇒

 9.2. Size:105K  onsemi
 ntms5835nlr2g.pdf pdf_icon

NTMS5P02R2G

NTMS5835NL Power MOSFET 40 V, 12 A, 10 mW Features Low RDS(on) Low Capacitance http //onsemi.com Optimized Gate Charge These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) 10 mW @ 10 V 40 V 12 A Parameter Symbol Value Unit 14 mW @ 4.5 V Drain-to-Source Voltage VDSS... See More ⇒

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Detailed specifications: NTMS4916NR2G, NTMS4917NR2G, NTMS4937NR2G, NTMS4939NR2G, NTMS4N01R2G, NTMS4P01R2, NTMS5835NLR2G, NTMS5838NLR2G, 2N60, NTMS5P02R2SG, NTMS7N03R2G, NTMSD2P102LR2, NTMSD3P102R2, NTMSD6N303R2, NTNS3164NZ, NTNS3193NZ, NTNS3A65PZ

Keywords - NTMS5P02R2G MOSFET specs

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