NTMSD6N303R2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMSD6N303R2
Código: E6N3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 2 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 6 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 19 nC
Tiempo de subida (tr): 22 nS
Conductancia de drenaje-sustrato (Cd): 210 pF
Resistencia entre drenaje y fuente RDS(on): 0.032 Ohm
Paquete / Cubierta: SO-8
Búsqueda de reemplazo de MOSFET NTMSD6N303R2
NTMSD6N303R2 Datasheet (PDF)
ntmsd6n303r2-d ntmsd6n303r2.pdf
NTMSD6N303R2Power MOSFET6 Amps, 30 VoltsN-Channel SO-8 FETKYtThe FETKY product family incorporates low RDS(on) MOSFETshttp://onsemi.compackaged with an industry leading, low forward drop, low leakageSchottky Barrier rectifier to offer high efficiency components in aMOSFETspace saving configuration. Independent pinouts for MOSFET and6.0 AMPERESSchottky die allow the flexibi
ntmsd3p303r2-d.pdf
NTMSD3P303R2FETKYP-Channel Enhancement-ModePower MOSFET and Schottky DiodeDual SO-8 PackageFeatures High Efficiency Components in a Single SO-8 Package http://onsemi.com High Density Power MOSFET with Low RDS(on),MOSFETSchottky Diode with Low VF-3.05 AMPERES Independent Pin-Outs for MOSFET and Schottky Die-30 VOLTSAllowing for Flexibility in Application Use
ntmsd2p102lr2.pdf
NTMSD2P102LR2FETKYPower MOSFET and Schottky DiodeDual SO-8 PackageFeatures High Efficiency Components in a Single SO-8 Package High Density Power MOSFET with Low RDS(on), http://onsemi.comSchottky Diode with Low VF Logic Level Gate DriveMOSFET Independent Pin-Outs for MOSFET and Schottky Die -2.3 AMPERES, -20 VOLTSAllowing for Flexibility in Application
ntmsd3p102r2-d ntmsd3p102r2.pdf
NTMSD3P102R2FETKYP-Channel Enhancement-ModePower MOSFET and Schottky DiodeDual SO-8 PackageFeatures High Efficiency Components in a Single SO-8 Packagehttp://onsemi.com High Density Power MOSFET with Low RDS(on),Schottky Diode with Low VFMOSFET Independent Pin-Outs for MOSFET and Schottky Die-3.05 AMPERESAllowing for Flexibility in Application Use-20 VOLT
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
