NTMSD6N303R2 MOSFET. Datasheet pdf. Equivalent
Type Designator: NTMSD6N303R2
Marking Code: E6N3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 19 nC
trⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 210 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: SO-8
NTMSD6N303R2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTMSD6N303R2 Datasheet (PDF)
ntmsd6n303r2-d ntmsd6n303r2.pdf
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ntmsd3p303r2-d.pdf
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ntmsd2p102lr2.pdf
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ntmsd3p102r2-d ntmsd3p102r2.pdf
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Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
