NTP6410ANG Datasheet. Equivalente

 ..1. Size:138K  onsemi
 ntb6410ang ntp6410ang.pdf

NTB6410AN, NTP6410AN, NVB6410AN N-Channel Power MOSFET 100 V, 76 A, 13 mW Features http //onsemi.com Low RDS(on) High Current Capability ID MAX 100% Avalanche Tested V(BR)DSS RDS(ON) MAX (Note 1) NVB Prefix for Automotive and Other Applications Requiring 100 V 13 mW @ 10 V 76 A Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable N-Chan

 5.1. Size:144K  onsemi
 ntb6410an ntp6410an.pdf

NTB6410AN, NTP6410AN N-Channel Power MOSFET 100 V, 76 A, 13 mW Features Low RDS(on) High Current Capability http //onsemi.com 100% Avalanche Tested These are Pb-Free Devices ID MAX V(BR)DSS RDS(ON) MAX (Note 1) MAXIMUM RATINGS (TJ = 25 C Unless otherwise specified) 100 V 13 mW @ 10 V 76 A Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 100 V N-Channel G

 5.2. Size:81K  onsemi
 ntb6410an ntp6410an nvb6410an.pdf

NTB6410AN, NTP6410AN, NVB6410AN N-Channel Power MOSFET 100 V, 76 A, 13 mW Features www.onsemi.com Low RDS(on) High Current Capability ID MAX 100% Avalanche Tested V(BR)DSS RDS(ON) MAX (Note 1) NVB Prefix for Automotive and Other Applications Requiring 100 V 13 mW @ 10 V 76 A Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable N-Channel

 8.1. Size:138K  onsemi
 ntb6412ang ntp6412ang.pdf

NTB6412AN, NTP6412AN, NVB6412AN N-Channel Power MOSFET 100 V, 58 A, 18.2 mW Features Low RDS(on) http //onsemi.com High Current Capability 100% Avalanche Tested ID MAX NVB Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(ON) MAX (Note 1) Unique Site and Control Change Requirements; AEC-Q101 100 V 18.2 mW @ 10 V 58 A Qualified and PPAP Capable

 8.2. Size:113K  onsemi
 ntb6413ang ntp6413ang.pdf

NTB6413AN, NTP6413AN, NVB6413AN N-Channel Power MOSFET 100 V, 42 A, 28 mW Features Low RDS(on) http //onsemi.com High Current Capability 100% Avalanche Tested ID MAX NVB Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(ON) MAX (Note 1) Unique Site and Control Change Requirements; AEC-Q101 100 V 28 mW @ 10 V 42 A Qualified and PPAP Capable The

 8.3. Size:111K  onsemi
 ntb6411n ntp6411n.pdf

NTB6411AN, NTP6411AN N-Channel Power MOSFET 100 V, 77 A, 14 mW Features Low RDS(on) High Current Capability http //onsemi.com 100% Avalanche Tested These are Pb-Free Devices ID MAX V(BR)DSS RDS(ON) MAX (Note 1) MAXIMUM RATINGS (TJ = 25 C Unless otherwise specified) 100 V 14 mW @ 10 V 77 A Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 100 V N-Channel G

 8.4. Size:271K  onsemi
 ntb6412an ntp6412an nvb6412an.pdf

NTB6412AN, NTP6412AN, NVB6412AN N-Channel Power MOSFET 100 V, 58 A, 18.2 mW Features Low RDS(on) www.onsemi.com High Current Capability 100% Avalanche Tested ID MAX NVB Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(ON) MAX (Note 1) Unique Site and Control Change Requirements; AEC-Q101 100 V 18.2 mW @ 10 V 58 A Qualified and PPAP Capable Th

 8.5. Size:139K  onsemi
 ntb6412an ntp6412an.pdf

NTB6412AN, NTP6412AN N-Channel Power MOSFET 100 V, 58 A, 18.2 mW Features Low RDS(on) High Current Capability http //onsemi.com 100% Avalanche Tested These are Pb-Free Devices ID MAX V(BR)DSS RDS(ON) MAX (Note 1) MAXIMUM RATINGS (TJ = 25 C Unless otherwise specified) 100 V 18.2 mW @ 10 V 58 A Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 100 V N-Channe

 8.6. Size:132K  onsemi
 ntb6413an ntp6413an nvb6413an.pdf

NTB6413AN, NTP6413AN, NVB6413AN MOSFET Power, N-Channel 100 V, 42 A, 28 mW www.onsemi.com Features Low RDS(on) ID MAX High Current Capability V(BR)DSS RDS(ON) MAX (Note 1) 100% Avalanche Tested 100 V 28 mW @ 10 V 42 A NVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable N-C

 8.7. Size:106K  onsemi
 ntp6411ang.pdf

NTB6411AN, NTP6411AN N-Channel Power MOSFET 100 V, 77 A, 14 mW Features Low RDS(on) High Current Capability http //onsemi.com 100% Avalanche Tested These are Pb-Free Devices ID MAX V(BR)DSS RDS(ON) MAX (Note 1) MAXIMUM RATINGS (TJ = 25 C Unless otherwise specified) 100 V 14 mW @ 10 V 77 A Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 100 V N-Channel G

 8.8. Size:143K  onsemi
 ntb6413an ntp6413an.pdf

NTB6413AN, NTP6413AN N-Channel Power MOSFET 100 V, 42 A, 28 mW Features Low RDS(on) High Current Capability http //onsemi.com 100% Avalanche Tested These are Pb-Free Devices ID MAX V(BR)DSS RDS(ON) MAX (Note 1) MAXIMUM RATINGS (TJ = 25 C Unless otherwise specified) 100 V 28 mW @ 10 V 42 A Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 100 V N-Channel G

 8.9. Size:1420K  cn vbsemi
 ntp6413ang.pdf

NTP6413ANG www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.032 at VGS = 10 V 45 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 40 COMPLIANT D TO-220AB G S G D S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C,