All MOSFET. NTP6410ANG Datasheet

 

NTP6410ANG Datasheet and Replacement


   Type Designator: NTP6410ANG
   Marking Code: 6410AN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 188 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 76 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 120 nC
   tr ⓘ - Rise Time: 170 nS
   Cossⓘ - Output Capacitance: 650 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TO-220
 

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NTP6410ANG Datasheet (PDF)

 ..1. Size:138K  onsemi
 ntb6410ang ntp6410ang.pdf pdf_icon

NTP6410ANG

NTB6410AN, NTP6410AN,NVB6410ANN-Channel Power MOSFET100 V, 76 A, 13 mWFeatureshttp://onsemi.com Low RDS(on) High Current CapabilityID MAX 100% Avalanche TestedV(BR)DSS RDS(ON) MAX (Note 1) NVB Prefix for Automotive and Other Applications Requiring100 V 13 mW @ 10 V 76 AUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapableN-Chan

 5.1. Size:144K  onsemi
 ntb6410an ntp6410an.pdf pdf_icon

NTP6410ANG

NTB6410AN, NTP6410ANN-Channel Power MOSFET100 V, 76 A, 13 mWFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com 100% Avalanche Tested These are Pb-Free DevicesID MAXV(BR)DSS RDS(ON) MAX (Note 1)MAXIMUM RATINGS (TJ = 25C Unless otherwise specified)100 V 13 mW @ 10 V 76 AParameter Symbol Value UnitDrain-to-Source Voltage VDSS 100 VN-ChannelG

 5.2. Size:81K  onsemi
 ntb6410an ntp6410an nvb6410an.pdf pdf_icon

NTP6410ANG

NTB6410AN, NTP6410AN,NVB6410ANN-Channel Power MOSFET100 V, 76 A, 13 mWFeatureswww.onsemi.com Low RDS(on) High Current CapabilityID MAX 100% Avalanche TestedV(BR)DSS RDS(ON) MAX (Note 1) NVB Prefix for Automotive and Other Applications Requiring100 V 13 mW @ 10 V 76 AUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapableN-Channel

 8.1. Size:138K  onsemi
 ntb6412ang ntp6412ang.pdf pdf_icon

NTP6410ANG

NTB6412AN, NTP6412AN,NVB6412ANN-Channel Power MOSFET100 V, 58 A, 18.2 mWFeatures Low RDS(on)http://onsemi.com High Current Capability 100% Avalanche TestedID MAX NVB Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(ON) MAX (Note 1)Unique Site and Control Change Requirements; AEC-Q101100 V 18.2 mW @ 10 V 58 AQualified and PPAP Capable

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Datasheet: NTP5411NG , NTP5412NG , NTP5426NG , NTP5860N , NTP5863NG , NTP5864NG , NTP60N06 , NTP60N06L , IRF1404 , NTP6411ANG , NTP6412ANG , NTP6413ANG , NTP65N02R , NTP75N03-6G , NTP75N03L09 , NTP75N03R , NTP75N06 .

Keywords - NTP6410ANG MOSFET datasheet

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