NTP6410ANG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NTP6410ANG
Маркировка: 6410AN
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 188 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 76 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 120 nC
Время нарастания (tr): 170 ns
Выходная емкость (Cd): 650 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.013 Ohm
Тип корпуса: TO-220
Аналог (замена) для NTP6410ANG
NTP6410ANG Datasheet (PDF)
ntb6410ang ntp6410ang.pdf
NTB6410AN, NTP6410AN,NVB6410ANN-Channel Power MOSFET100 V, 76 A, 13 mWFeatureshttp://onsemi.com Low RDS(on) High Current CapabilityID MAX 100% Avalanche TestedV(BR)DSS RDS(ON) MAX (Note 1) NVB Prefix for Automotive and Other Applications Requiring100 V 13 mW @ 10 V 76 AUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapableN-Chan
ntb6410an ntp6410an.pdf
NTB6410AN, NTP6410ANN-Channel Power MOSFET100 V, 76 A, 13 mWFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com 100% Avalanche Tested These are Pb-Free DevicesID MAXV(BR)DSS RDS(ON) MAX (Note 1)MAXIMUM RATINGS (TJ = 25C Unless otherwise specified)100 V 13 mW @ 10 V 76 AParameter Symbol Value UnitDrain-to-Source Voltage VDSS 100 VN-ChannelG
ntb6410an ntp6410an nvb6410an.pdf
NTB6410AN, NTP6410AN,NVB6410ANN-Channel Power MOSFET100 V, 76 A, 13 mWFeatureswww.onsemi.com Low RDS(on) High Current CapabilityID MAX 100% Avalanche TestedV(BR)DSS RDS(ON) MAX (Note 1) NVB Prefix for Automotive and Other Applications Requiring100 V 13 mW @ 10 V 76 AUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapableN-Channel
ntb6412ang ntp6412ang.pdf
NTB6412AN, NTP6412AN,NVB6412ANN-Channel Power MOSFET100 V, 58 A, 18.2 mWFeatures Low RDS(on)http://onsemi.com High Current Capability 100% Avalanche TestedID MAX NVB Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(ON) MAX (Note 1)Unique Site and Control Change Requirements; AEC-Q101100 V 18.2 mW @ 10 V 58 AQualified and PPAP Capable
ntb6413ang ntp6413ang.pdf
NTB6413AN, NTP6413AN,NVB6413ANN-Channel Power MOSFET100 V, 42 A, 28 mWFeatures Low RDS(on)http://onsemi.com High Current Capability 100% Avalanche TestedID MAX NVB Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(ON) MAX (Note 1)Unique Site and Control Change Requirements; AEC-Q101100 V 28 mW @ 10 V 42 AQualified and PPAP Capable The
ntb6411n ntp6411n.pdf
NTB6411AN, NTP6411ANN-Channel Power MOSFET100 V, 77 A, 14 mWFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com 100% Avalanche Tested These are Pb-Free DevicesID MAXV(BR)DSS RDS(ON) MAX (Note 1)MAXIMUM RATINGS (TJ = 25C Unless otherwise specified)100 V 14 mW @ 10 V 77 AParameter Symbol Value UnitDrain-to-Source Voltage VDSS 100 VN-ChannelG
ntb6412an ntp6412an nvb6412an.pdf
NTB6412AN, NTP6412AN,NVB6412ANN-Channel Power MOSFET100 V, 58 A, 18.2 mWFeatures Low RDS(on)www.onsemi.com High Current Capability 100% Avalanche TestedID MAX NVB Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(ON) MAX (Note 1)Unique Site and Control Change Requirements; AEC-Q101100 V 18.2 mW @ 10 V 58 AQualified and PPAP Capable Th
ntb6412an ntp6412an.pdf
NTB6412AN, NTP6412ANN-Channel Power MOSFET100 V, 58 A, 18.2 mWFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com 100% Avalanche Tested These are Pb-Free DevicesID MAXV(BR)DSS RDS(ON) MAX (Note 1)MAXIMUM RATINGS (TJ = 25C Unless otherwise specified)100 V 18.2 mW @ 10 V 58 AParameter Symbol Value UnitDrain-to-Source Voltage VDSS 100 VN-Channe
ntb6413an ntp6413an nvb6413an.pdf
NTB6413AN, NTP6413AN,NVB6413ANMOSFET Power,N-Channel100 V, 42 A, 28 mWwww.onsemi.comFeatures Low RDS(on)ID MAX High Current CapabilityV(BR)DSS RDS(ON) MAX (Note 1) 100% Avalanche Tested100 V 28 mW @ 10 V 42 A NVB Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapableN-C
ntp6411ang.pdf
NTB6411AN, NTP6411ANN-Channel Power MOSFET100 V, 77 A, 14 mWFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com 100% Avalanche Tested These are Pb-Free DevicesID MAXV(BR)DSS RDS(ON) MAX (Note 1)MAXIMUM RATINGS (TJ = 25C Unless otherwise specified)100 V 14 mW @ 10 V 77 AParameter Symbol Value UnitDrain-to-Source Voltage VDSS 100 VN-ChannelG
ntb6413an ntp6413an.pdf
NTB6413AN, NTP6413ANN-Channel Power MOSFET100 V, 42 A, 28 mWFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com 100% Avalanche Tested These are Pb-Free DevicesID MAXV(BR)DSS RDS(ON) MAX (Note 1)MAXIMUM RATINGS (TJ = 25C Unless otherwise specified)100 V 28 mW @ 10 V 42 AParameter Symbol Value UnitDrain-to-Source Voltage VDSS 100 VN-ChannelG
ntp6413ang.pdf
NTP6413ANGwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.032 at VGS = 10 V45RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V40COMPLIANTDTO-220AB GSG D STop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C,
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