NTR4003NT1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

NTR4003N, NVR4003NSmall Signal MOSFET30 V, 0.56 A, Single N-Channel, SOT-23Features Low Gate Voltage Threshold (VGS(TH)) to Facilitate Drive CircuitDesign Low Gate Charge for Fast Switchinghttp://onsemi.com ESD Protected Gate SOT-23 Package Provides Excellent Thermal PerformanceV(BR)DSS RDS(on) TYP ID MAX Minimum Breakdown Voltage Rating of 30 V1.0 W @ 4.0

NTR4003N, NVR4003NSmall Signal MOSFET30 V, 0.56 A, Single N-Channel, SOT-23Features Low Gate Voltage Threshold (VGS(TH)) to Facilitate Drive CircuitDesign Low Gate Charge for Fast Switchingwww.onsemi.com ESD Protected Gate SOT-23 Package Provides Excellent Thermal PerformanceV(BR)DSS RDS(on) TYP ID MAX Minimum Breakdown Voltage Rating of 30 V1.0 W @ 4.0 V

NTR4003NSmall Signal MOSFET30 V, 0.56 A, Single N-Channel, SOT-23Features Low Gate Voltage Threshold (VGS(TH)) to Facilitate Drive CircuitDesign Low Gate Charge for Fast Switching http://onsemi.com ESD Protected GateV(BR)DSS RDS(on) TYP ID MAX SOT-23 Package Provides Excellent Thermal Performance Minimum Breakdown Voltage Rating of 30 V1.0 W @ 4.0 V30 V 0.

LESHAN RADIO COMPANY, LTD.Small Signal MOSFET30 V, 0.56 A, Single, N-Channel, GateESD Protection, SOT-23LNTR4003NLT1GFeatures3 Low Gate Voltage Threshold(Vgs(th))to Facilitate Drive Circuit Design Low Gate Charge for Fast Switching ESD Protected Gate1 Minimum Breakdown Voltage Rating of 30 V2 We declare that the material of product is ROHS compliant an

SMD Type MOSFETN-Channel Enhancement MOSFETNTR4003N (KTR4003N)SOT-23 FeaturesUnit: mm+0.12.9 -0.1 VDS (V) =30V+0.10.4 -0.1 ID =0.56A(VGS =20V) 3 RDS(ON) 1.5 (VGS =4V) RDS(ON) 2 (VGS =2.5V)12+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating UnitDrain-Source Voltage VDS 30

SMD Type MOSFETN-Channel Enhancement MOSFETNTR4003N (KTR4003N)Features SOT-23-3Unit: mm+0.22.9 -0.1VDS (V) = 30V +0.10.4 -0.13ID = 0.56 A (VGS = 20V)RDS(ON) 1.5 (VGS = 4V)RDS(ON) 2 (VGS = 2.5V)1 2+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.21. Gate2. Source3. DrainAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage VDS

NTR4003NN-Channel Enhancement Mode Field Effect TransistorProduct Summary V 30V DS I 560mA D R ( at V =4.5V)DS(ON) GS 1.5ohm R ( at V =3.7V)DS(ON) GS 2.5ohm General Description Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low Input / Output LeakageApplicat