NTR4003NT1G Todos los transistores

NTR4003N, NVR4003N Small Signal MOSFET 30 V, 0.56 A, Single N-Channel, SOT-23 Features Low Gate Voltage Threshold (VGS(TH)) to Facilitate Drive Circuit Design Low Gate Charge for Fast Switching http //onsemi.com ESD Protected Gate SOT-23 Package Provides Excellent Thermal Performance V(BR)DSS RDS(on) TYP ID MAX Minimum Breakdown Voltage Rating of 30 V 1.0 W @ 4.0

NTR4003N, NVR4003N Small Signal MOSFET 30 V, 0.56 A, Single N-Channel, SOT-23 Features Low Gate Voltage Threshold (VGS(TH)) to Facilitate Drive Circuit Design Low Gate Charge for Fast Switching www.onsemi.com ESD Protected Gate SOT-23 Package Provides Excellent Thermal Performance V(BR)DSS RDS(on) TYP ID MAX Minimum Breakdown Voltage Rating of 30 V 1.0 W @ 4.0 V

NTR4003N Small Signal MOSFET 30 V, 0.56 A, Single N-Channel, SOT-23 Features Low Gate Voltage Threshold (VGS(TH)) to Facilitate Drive Circuit Design Low Gate Charge for Fast Switching http //onsemi.com ESD Protected Gate V(BR)DSS RDS(on) TYP ID MAX SOT-23 Package Provides Excellent Thermal Performance Minimum Breakdown Voltage Rating of 30 V 1.0 W @ 4.0 V 30 V 0.

LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 30 V, 0.56 A, Single, N-Channel, Gate ESD Protection, SOT-23 LNTR4003NLT1G Features 3 Low Gate Voltage Threshold(Vgs(th))to Facilitate Drive Circuit Design Low Gate Charge for Fast Switching ESD Protected Gate 1 Minimum Breakdown Voltage Rating of 30 V 2 We declare that the material of product is ROHS compliant an

SMD Type MOSFET N-Channel Enhancement MOSFET NTR4003N (KTR4003N) SOT-23 Features Unit mm +0.1 2.9 -0.1 VDS (V) =30V +0.1 0.4 -0.1 ID =0.56A(VGS = 20V) 3 RDS(ON) 1.5 (VGS =4V) RDS(ON) 2 (VGS =2.5V) 12 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30

SMD Type MOSFET N-Channel Enhancement MOSFET NTR4003N (KTR4003N) Features SOT-23-3 Unit mm +0.2 2.9 -0.1 VDS (V) = 30V +0.1 0.4 -0.1 3 ID = 0.56 A (VGS = 20V) RDS(ON) 1.5 (VGS = 4V) RDS(ON) 2 (VGS = 2.5V) 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS

NTR4003N N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 560mA D R ( at V =4.5V) DS(ON) GS 1.5ohm R ( at V =3.7V) DS(ON) GS 2.5ohm General Description Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low Input / Output Leakage Applicat