NTR4003NT1G
MOSFET. Datasheet pdf. Equivalent
Type Designator: NTR4003NT1G
Marking Code: TR8
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.69
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4
V
|Id|ⓘ - Maximum Drain Current: 0.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 1.15
nC
trⓘ - Rise Time: 47.9
nS
Cossⓘ -
Output Capacitance: 19.7
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5
Ohm
Package:
SOT-23
NTR4003NT1G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTR4003NT1G
Datasheet (PDF)
..1. Size:95K onsemi
ntr4003nt1g.pdf 
NTR4003N, NVR4003NSmall Signal MOSFET30 V, 0.56 A, Single N-Channel, SOT-23Features Low Gate Voltage Threshold (VGS(TH)) to Facilitate Drive CircuitDesign Low Gate Charge for Fast Switchinghttp://onsemi.com ESD Protected Gate SOT-23 Package Provides Excellent Thermal PerformanceV(BR)DSS RDS(on) TYP ID MAX Minimum Breakdown Voltage Rating of 30 V1.0 W @ 4.0
6.1. Size:84K onsemi
ntr4003n nvr4003n.pdf
NTR4003N, NVR4003NSmall Signal MOSFET30 V, 0.56 A, Single N-Channel, SOT-23Features Low Gate Voltage Threshold (VGS(TH)) to Facilitate Drive CircuitDesign Low Gate Charge for Fast Switchingwww.onsemi.com ESD Protected Gate SOT-23 Package Provides Excellent Thermal PerformanceV(BR)DSS RDS(on) TYP ID MAX Minimum Breakdown Voltage Rating of 30 V1.0 W @ 4.0 V
6.2. Size:61K onsemi
ntr4003n-d.pdf
NTR4003NSmall Signal MOSFET30 V, 0.56 A, Single N-Channel, SOT-23Features Low Gate Voltage Threshold (VGS(TH)) to Facilitate Drive CircuitDesign Low Gate Charge for Fast Switching http://onsemi.com ESD Protected GateV(BR)DSS RDS(on) TYP ID MAX SOT-23 Package Provides Excellent Thermal Performance Minimum Breakdown Voltage Rating of 30 V1.0 W @ 4.0 V30 V 0.
6.3. Size:213K lrc
lntr4003nlt1g.pdf
LESHAN RADIO COMPANY, LTD.Small Signal MOSFET30 V, 0.56 A, Single, N-Channel, GateESD Protection, SOT-23LNTR4003NLT1GFeatures3 Low Gate Voltage Threshold(Vgs(th))to Facilitate Drive Circuit Design Low Gate Charge for Fast Switching ESD Protected Gate1 Minimum Breakdown Voltage Rating of 30 V2 We declare that the material of product is ROHS compliant an
6.4. Size:89K kexin
ntr4003n.pdf
SMD Type MOSFETN-Channel Enhancement MOSFETNTR4003N (KTR4003N)SOT-23 FeaturesUnit: mm+0.12.9 -0.1 VDS (V) =30V+0.10.4 -0.1 ID =0.56A(VGS =20V) 3 RDS(ON) 1.5 (VGS =4V) RDS(ON) 2 (VGS =2.5V)12+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating UnitDrain-Source Voltage VDS 30
6.5. Size:361K kexin
ntr4003n-3.pdf
SMD Type MOSFETN-Channel Enhancement MOSFETNTR4003N (KTR4003N)Features SOT-23-3Unit: mm+0.22.9 -0.1VDS (V) = 30V +0.10.4 -0.13ID = 0.56 A (VGS = 20V)RDS(ON) 1.5 (VGS = 4V)RDS(ON) 2 (VGS = 2.5V)1 2+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.21. Gate2. Source3. DrainAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage VDS
6.6. Size:1465K slkor
ntr4003n.pdf
NTR4003NN-Channel Enhancement Mode Field Effect TransistorProduct Summary V 30V DS I 560mA D R ( at V =4.5V)DS(ON) GS 1.5ohm R ( at V =3.7V)DS(ON) GS 2.5ohm General Description Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low Input / Output LeakageApplicat
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