NTR4170NT1G Todos los transistores

NTR4170NT1G www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23)

NTR4170N Power MOSFET 30 V, 3.2 A, Single N-Channel, SOT-23 Features Low RDS(on) Low Gate Charge http //onsemi.com Low Threshold Voltage Halide Free V(BR)DSS RDS(on) MAX ID MAX This is a Pb-Free Device 55 mW @ 10 V 3.2 A Applications 30 V 70 mW @ 4.5 V 2.8 A Power Converters for Portables 110 mW @ 2.5 V 2.0 A Battery Management Load/Power Switch S

NTR4171P Power MOSFET -30 V, -3.5 A, Single P-Channel, SOT-23 Features Low RDS(on) at Low Gate Voltage Low Threshold Voltage http //onsemi.com High Power and Current Handling Capability This is a Pb-Free Device V(BR)DSS RDS(on) MAX ID MAX 75 mW @ -10 V -2.2 A Applications Load Switch -30 V 110 mW @ -4.5 V -1.8 A Optimized for Battery and Load Management Appli

Product specification NTR4171P Power MOSFET V(BR)DSS RDS(on) MAX ID MAX -30 V, -3.5 A, Single P-Channel, SOT-23 75 mW @ -10 V -2.2 A -30 V 110 mW @ -4.5 V -1.8 A Features Low RDS(on) at Low Gate Voltage 150 mW @ -2.5 V -1.0 A Low Threshold Voltage High Power and Current Handling Capability P-CHANNEL MOSFET This is a Pb-Free Device S Applications Load Switch

NTR4171PT1G www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT