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NTR4170NT1G Spec and Replacement


   Type Designator: NTR4170NT1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9.9 nS
   Cossⓘ - Output Capacitance: 53.6 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: SOT-23
 

 NTR4170NT1G substitution

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NTR4170NT1G Specs

 ..1. Size:97K  tysemi
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NTR4170NT1G

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NTR4170NT1G

NTR4170NT1G www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23)... See More ⇒

 6.1. Size:100K  onsemi
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NTR4170NT1G

NTR4170N Power MOSFET 30 V, 3.2 A, Single N-Channel, SOT-23 Features Low RDS(on) Low Gate Charge http //onsemi.com Low Threshold Voltage Halide Free V(BR)DSS RDS(on) MAX ID MAX This is a Pb-Free Device 55 mW @ 10 V 3.2 A Applications 30 V 70 mW @ 4.5 V 2.8 A Power Converters for Portables 110 mW @ 2.5 V 2.0 A Battery Management Load/Power Switch S... See More ⇒

 8.1. Size:134K  onsemi
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NTR4170NT1G

NTR4171P Power MOSFET -30 V, -3.5 A, Single P-Channel, SOT-23 Features Low RDS(on) at Low Gate Voltage Low Threshold Voltage http //onsemi.com High Power and Current Handling Capability This is a Pb-Free Device V(BR)DSS RDS(on) MAX ID MAX 75 mW @ -10 V -2.2 A Applications Load Switch -30 V 110 mW @ -4.5 V -1.8 A Optimized for Battery and Load Management Appli... See More ⇒

Detailed specifications: NTR1P02T1 , NTR1P02T3 , NTR2101PT1G , NTR3161NT1G , NTR3162PT1G , NTR3A30PZ , NTR4003NT1G , NTR4101PT1G , AO3401 , NTR4171PT1G , NTR4501NT1 , NTR4502PT1 , NTR4503NT1 , NTR5103N , NTR5105P , NTR5198NL , NTRV4101P .

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