NTR4170NT1G Datasheet. Specs and Replacement

Type Designator: NTR4170NT1G  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.78 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.9 nS

Cossⓘ - Output Capacitance: 53.6 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: SOT-23

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NTR4170NT1G datasheet

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NTR4170NT1G

NTR4170NT1G www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23)... See More ⇒

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NTR4170NT1G

NTR4170N Power MOSFET 30 V, 3.2 A, Single N-Channel, SOT-23 Features Low RDS(on) Low Gate Charge http //onsemi.com Low Threshold Voltage Halide Free V(BR)DSS RDS(on) MAX ID MAX This is a Pb-Free Device 55 mW @ 10 V 3.2 A Applications 30 V 70 mW @ 4.5 V 2.8 A Power Converters for Portables 110 mW @ 2.5 V 2.0 A Battery Management Load/Power Switch S... See More ⇒

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NTR4170NT1G

NTR4171P Power MOSFET -30 V, -3.5 A, Single P-Channel, SOT-23 Features Low RDS(on) at Low Gate Voltage Low Threshold Voltage http //onsemi.com High Power and Current Handling Capability This is a Pb-Free Device V(BR)DSS RDS(on) MAX ID MAX 75 mW @ -10 V -2.2 A Applications Load Switch -30 V 110 mW @ -4.5 V -1.8 A Optimized for Battery and Load Management Appli... See More ⇒

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Detailed specifications: NTR1P02T1, NTR1P02T3, NTR2101PT1G, NTR3161NT1G, NTR3162PT1G, NTR3A30PZ, NTR4003NT1G, NTR4101PT1G, BS170, NTR4171PT1G, NTR4501NT1, NTR4502PT1, NTR4503NT1, NTR5103N, NTR5105P, NTR5198NL, NTRV4101P

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