Справочник MOSFET. NTR4170NT1G

 

NTR4170NT1G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NTR4170NT1G
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.78 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 9.9 ns
   Cossⓘ - Выходная емкость: 53.6 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.055 Ohm
   Тип корпуса: SOT-23

 Аналог (замена) для NTR4170NT1G

 

 

NTR4170NT1G Datasheet (PDF)

 ..1. Size:97K  tysemi
 ntr4170n ntr4170nt1g.pdf

NTR4170NT1G NTR4170NT1G

Product specificationNTR4170NPower MOSFETV(BR)DSS RDS(on) MAX ID MAX30 V, 3.2 A, Single N-Channel, SOT-2355 mW @ 10 V 3.2 A30 V 70 mW @ 4.5 V 2.8 AFeatures Low RDS(on)110 mW @ 2.5 V 2.0 A Low Gate ChargeSIMPLIFIED SCHEMATIC - N-CHANNEL Low Threshold Voltage Halide FreeD This is a Pb-Free DeviceApplications Power Converters for PortablesG

 ..2. Size:849K  cn vbsemi
 ntr4170nt1g.pdf

NTR4170NT1G NTR4170NT1G

NTR4170NT1Gwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)

 6.1. Size:100K  onsemi
 ntr4170n.pdf

NTR4170NT1G NTR4170NT1G

NTR4170NPower MOSFET30 V, 3.2 A, Single N-Channel, SOT-23Features Low RDS(on) Low Gate Chargehttp://onsemi.com Low Threshold Voltage Halide Free V(BR)DSS RDS(on) MAX ID MAX This is a Pb-Free Device55 mW @ 10 V 3.2 AApplications 30 V 70 mW @ 4.5 V 2.8 A Power Converters for Portables110 mW @ 2.5 V 2.0 A Battery Management Load/Power SwitchS

 8.1. Size:134K  onsemi
 ntr4171p.pdf

NTR4170NT1G NTR4170NT1G

NTR4171PPower MOSFET-30 V, -3.5 A, Single P-Channel, SOT-23Features Low RDS(on) at Low Gate Voltage Low Threshold Voltagehttp://onsemi.com High Power and Current Handling Capability This is a Pb-Free Device V(BR)DSS RDS(on) MAX ID MAX75 mW @ -10 V -2.2 AApplications Load Switch -30 V 110 mW @ -4.5 V -1.8 A Optimized for Battery and Load Management Appli

 8.2. Size:133K  tysemi
 ntr4171p ntr4171pt1g.pdf

NTR4170NT1G NTR4170NT1G

Product specificationNTR4171PPower MOSFETV(BR)DSS RDS(on) MAX ID MAX-30 V, -3.5 A, Single P-Channel, SOT-2375 mW @ -10 V -2.2 A-30 V 110 mW @ -4.5 V -1.8 AFeatures Low RDS(on) at Low Gate Voltage150 mW @ -2.5 V -1.0 A Low Threshold Voltage High Power and Current Handling CapabilityP-CHANNEL MOSFET This is a Pb-Free DeviceSApplications Load Switch

 8.3. Size:791K  cn vbsemi
 ntr4171pt1g.pdf

NTR4170NT1G NTR4170NT1G

NTR4171PT1Gwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT

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