FIR5N60FG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FIR5N60FG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 33 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 4.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 42 nS
Cossⓘ - Capacitancia de salida: 55 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm
Encapsulados: TO220F
Búsqueda de reemplazo de FIR5N60FG MOSFET
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FIR5N60FG datasheet
fir5n60fg.pdf
FIR5N60FG Advanced N-Ch Power MOSFET PIN Connection TO-220F Switchng Regulator Application Features High Voltage BVDSS=600V(Min.) Low Crss Crss=9.8F(Typ.) Low gate charge Qg=12nC(Typ.) G D S Low RDS(on) RDS(on)=1.7 D G S Marking Diagram Y = Year A = Assembly Location YAWW WW = Work Week FIR5N60F FIR5N60F = Specific Device Code Absolute maxi
fir5n60fg.pdf
FIR5N60FG Advanced N-Ch Power MOSFET PIN Connection TO-220F Switchng Regulator Application Features High Voltage BVDSS=600V(Min.) Low Crss Crss=8.5F(Typ.) Low gate charge Qg=14.5nC(Typ.) G D S Low RDS(on) RDS(on)=1.8 g Schematic dia ram D G S Marking Diagram Y = Year A = Assembly Location YAWW WW = Work Week FIR5N60F FIR5N60F = Specific D
fir5n65fg.pdf
FIR5N65FG 650V N-Channel MOSFET PIN Connection TO-220F Features Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge Qg=13.7nC (Typ.). BVDSS=650V,ID=4.5A G D S RDS(on) 2.6 (Max) @VG=10V 100% Avalanche Tested g Schematic dia ram D G S Marking Diagram Y = Year A = Assem
fir5n50fg.pdf
FIR5N50FG N-Channel Power MOSFET-G PIN Connection TO-220F Features Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge Qg=14nC (Typ.). BVDSS=500V,ID=5A RDS(on) 1.5 (Max) @VG=10V G DS 100% Avalanche Tested g Schematic dia ram D G S Marking Diagram Y = Year YAWWVA A = Assembl
Otros transistores... NTZS3151PT1G , 3SK290 , AO4400 , BUZ48 , CEP6030L , CEB6030L , ECX10N20 , FHP1906A , EMB04N03H , FNK30H150 , GPT09N50 , GPT09N50D , HY1707P , HY1707M , HY1707B , HY1707I , HY1707MF .
History: AUIRF7341Q | NTR4101P | SI1028X | STB55NF06-1 | SL12N100K | CS3N90A3H1-G | 2SK2957L
History: AUIRF7341Q | NTR4101P | SI1028X | STB55NF06-1 | SL12N100K | CS3N90A3H1-G | 2SK2957L
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