FIR5N60FG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FIR5N60FG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 33 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 42 nS
   Cossⓘ - Capacitancia de salida: 55 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm
   Paquete / Cubierta: TO220F

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FIR5N60FG Datasheet (PDF)

..1. Size:4070K first silicon
fir5n60fg.pdf

FIR5N60FGAdvanced N-Ch Power MOSFETPIN Connection TO-220FSwitchng Regulator ApplicationFeatures High Voltage: BVDSS=600V(Min.) Low Crss : Crss=9.8F(Typ.) Low gate charge : Qg=12nC(Typ.) G D S Low RDS(on) :RDS(on)=1.7D G S Marking DiagramY = YearA = Assembly LocationYAWWWW = Work WeekFIR5N60FFIR5N60F = Specific Device CodeAbsolute maxi

..2. Size:5898K first semi
fir5n60fg.pdf

FIR5N60FGAdvanced N-Ch Power MOSFETPIN Connection TO-220FSwitchng Regulator ApplicationFeatures High Voltage: BVDSS=600V(Min.) Low Crss : Crss=8.5F(Typ.) Low gate charge : Qg=14.5nC(Typ.) G D S Low RDS(on) :RDS(on)=1.8gSchematic dia ram D G S Marking DiagramY = YearA = Assembly LocationYAWWWW = Work WeekFIR5N60FFIR5N60F = Specific D

8.1. Size:3045K first semi
fir5n65fg.pdf

FIR5N65FG650V N-Channel MOSFET PIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=13.7nC (Typ.). BVDSS=650V,ID=4.5AG D S RDS(on) : 2.6 (Max) @VG=10V 100% Avalanche TestedgSchematic dia ram D G S Marking DiagramY = YearA = Assem

9.1. Size:4172K first semi
fir5n50fg.pdf

FIR5N50FG N-Channel Power MOSFET-GPIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=14nC (Typ.). BVDSS=500V,ID=5A RDS(on) : 1.5 (Max) @VG=10V GDS 100% Avalanche TestedgSchematic dia ramDGSMarking DiagramY = YearYAWWVAA = Assembl

9.2. Size:1995K first semi
fir5ns70alg.pdf

FIR5NS70ALG5.0A,700V N-CHANNEL SUPER-JUNCTION MOSFETPIN Connection TO-252(D-PAK) DESCRIPTION The FIR5NS70AL is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching Dtime, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used inGhigh speed switching applicati

9.3. Size:2130K first semi
fir5n80fg.pdf

FIR5N80FG800V N-Channel MOSFET -TPIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=31nC (Typ.). BVDSS=800V,ID=5AG D S RDS(on) : 2.4 (Max) @VG=10V 100% Avalanche TestedgSchematic dia ram D G S Marking DiagramY = YearA = Assembl

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