Справочник MOSFET. FIR5N60FG

 

FIR5N60FG Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FIR5N60FG
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 33 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 42 ns
   Cossⓘ - Выходная емкость: 55 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2 Ohm
   Тип корпуса: TO220F
     - подбор MOSFET транзистора по параметрам

 

FIR5N60FG Datasheet (PDF)

 ..1. Size:4070K  first silicon
fir5n60fg.pdfpdf_icon

FIR5N60FG

FIR5N60FGAdvanced N-Ch Power MOSFETPIN Connection TO-220FSwitchng Regulator ApplicationFeatures High Voltage: BVDSS=600V(Min.) Low Crss : Crss=9.8F(Typ.) Low gate charge : Qg=12nC(Typ.) G D S Low RDS(on) :RDS(on)=1.7D G S Marking DiagramY = YearA = Assembly LocationYAWWWW = Work WeekFIR5N60FFIR5N60F = Specific Device CodeAbsolute maxi

 ..2. Size:5898K  first semi
fir5n60fg.pdfpdf_icon

FIR5N60FG

FIR5N60FGAdvanced N-Ch Power MOSFETPIN Connection TO-220FSwitchng Regulator ApplicationFeatures High Voltage: BVDSS=600V(Min.) Low Crss : Crss=8.5F(Typ.) Low gate charge : Qg=14.5nC(Typ.) G D S Low RDS(on) :RDS(on)=1.8gSchematic dia ram D G S Marking DiagramY = YearA = Assembly LocationYAWWWW = Work WeekFIR5N60FFIR5N60F = Specific D

 8.1. Size:3045K  first semi
fir5n65fg.pdfpdf_icon

FIR5N60FG

FIR5N65FG650V N-Channel MOSFET PIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=13.7nC (Typ.). BVDSS=650V,ID=4.5AG D S RDS(on) : 2.6 (Max) @VG=10V 100% Avalanche TestedgSchematic dia ram D G S Marking DiagramY = YearA = Assem

 9.1. Size:4172K  first semi
fir5n50fg.pdfpdf_icon

FIR5N60FG

FIR5N50FG N-Channel Power MOSFET-GPIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=14nC (Typ.). BVDSS=500V,ID=5A RDS(on) : 1.5 (Max) @VG=10V GDS 100% Avalanche TestedgSchematic dia ramDGSMarking DiagramY = YearYAWWVAA = Assembl

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: QM0008J | FIR20N65FG | AP55T10GH-HF | MTB1D7N03ATH8 | 2SK610 | 2SK2525-01 | IRF3704ZLPBF

 

 
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