All MOSFET. FIR5N60FG Datasheet

 

FIR5N60FG Datasheet and Replacement


   Type Designator: FIR5N60FG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO220F
 

 FIR5N60FG substitution

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FIR5N60FG Datasheet (PDF)

 ..1. Size:4070K  first silicon
fir5n60fg.pdf pdf_icon

FIR5N60FG

FIR5N60FGAdvanced N-Ch Power MOSFETPIN Connection TO-220FSwitchng Regulator ApplicationFeatures High Voltage: BVDSS=600V(Min.) Low Crss : Crss=9.8F(Typ.) Low gate charge : Qg=12nC(Typ.) G D S Low RDS(on) :RDS(on)=1.7D G S Marking DiagramY = YearA = Assembly LocationYAWWWW = Work WeekFIR5N60FFIR5N60F = Specific Device CodeAbsolute maxi

 ..2. Size:5898K  first semi
fir5n60fg.pdf pdf_icon

FIR5N60FG

FIR5N60FGAdvanced N-Ch Power MOSFETPIN Connection TO-220FSwitchng Regulator ApplicationFeatures High Voltage: BVDSS=600V(Min.) Low Crss : Crss=8.5F(Typ.) Low gate charge : Qg=14.5nC(Typ.) G D S Low RDS(on) :RDS(on)=1.8gSchematic dia ram D G S Marking DiagramY = YearA = Assembly LocationYAWWWW = Work WeekFIR5N60FFIR5N60F = Specific D

 8.1. Size:3045K  first semi
fir5n65fg.pdf pdf_icon

FIR5N60FG

FIR5N65FG650V N-Channel MOSFET PIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=13.7nC (Typ.). BVDSS=650V,ID=4.5AG D S RDS(on) : 2.6 (Max) @VG=10V 100% Avalanche TestedgSchematic dia ram D G S Marking DiagramY = YearA = Assem

 9.1. Size:4172K  first semi
fir5n50fg.pdf pdf_icon

FIR5N60FG

FIR5N50FG N-Channel Power MOSFET-GPIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=14nC (Typ.). BVDSS=500V,ID=5A RDS(on) : 1.5 (Max) @VG=10V GDS 100% Avalanche TestedgSchematic dia ramDGSMarking DiagramY = YearYAWWVAA = Assembl

Datasheet: NTZS3151PT1G , 3SK290 , AO4400 , BUZ48 , CEP6030L , CEB6030L , ECX10N20 , FHP1906A , 2SK3918 , FNK30H150 , GPT09N50 , GPT09N50D , HY1707P , HY1707M , HY1707B , HY1707I , HY1707MF .

History: SI2366DS

Keywords - FIR5N60FG MOSFET datasheet

 FIR5N60FG cross reference
 FIR5N60FG equivalent finder
 FIR5N60FG lookup
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