ME7170-G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ME7170-G  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 56 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 110 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21 nS

Cossⓘ - Capacitancia de salida: 514 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0026 Ohm

Encapsulados: POWERDFN5X6

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ME7170-G datasheet

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ME7170-G

ME7170-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7170-G is the N-Channel logic enhancement mode power RDS(ON) 2.6m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON) 3.9m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely lo

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 me7170-g.pdf pdf_icon

ME7170-G

ME7170-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7170-G is the N-Channel logic enhancement mode power RDS(ON) 2.6m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON) 3.9m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low R

 8.1. Size:1344K  1
 me7170.pdf pdf_icon

ME7170-G

ME7170-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7170-G is the N-Channel logic enhancement mode power RDS(ON) 2.6m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON) 3.9m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely lo

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