ME7170-G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ME7170-G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 56 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 110 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 21 nS
Cossⓘ - Capacitancia de salida: 514 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0026 Ohm
Paquete / Cubierta: POWERDFN5X6
Búsqueda de reemplazo de ME7170-G MOSFET
ME7170-G datasheet
me7170-g.pdf
ME7170-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7170-G is the N-Channel logic enhancement mode power RDS(ON) 2.6m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON) 3.9m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely lo... See More ⇒
me7170-g.pdf
ME7170-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7170-G is the N-Channel logic enhancement mode power RDS(ON) 2.6m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON) 3.9m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low R... See More ⇒
me7170.pdf
ME7170-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7170-G is the N-Channel logic enhancement mode power RDS(ON) 2.6m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON) 3.9m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely lo... See More ⇒
Otros transistores... HY1707P , HY1707M , HY1707B , HY1707I , HY1707MF , HY1707PS , HY1707PM , LTP70N06 , IRF840 , TP0610T , WML07N65C2 , WMM07N65C2 , WMO07N65C2 , WMP07N65C2 , WMG07N65C2 , WMH07N65C2 , 3N155 .
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