ME7170-G Datasheet. Specs and Replacement

Type Designator: ME7170-G  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 514 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm

Package: POWERDFN5X6

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ME7170-G datasheet

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ME7170-G

ME7170-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7170-G is the N-Channel logic enhancement mode power RDS(ON) 2.6m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON) 3.9m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely lo... See More ⇒

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ME7170-G

ME7170-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7170-G is the N-Channel logic enhancement mode power RDS(ON) 2.6m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON) 3.9m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low R... See More ⇒

 8.1. Size:1344K  1
 me7170.pdf pdf_icon

ME7170-G

ME7170-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7170-G is the N-Channel logic enhancement mode power RDS(ON) 2.6m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON) 3.9m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely lo... See More ⇒

Detailed specifications: HY1707P, HY1707M, HY1707B, HY1707I, HY1707MF, HY1707PS, HY1707PM, LTP70N06, IRF740, TP0610T, WML07N65C2, WMM07N65C2, WMO07N65C2, WMP07N65C2, WMG07N65C2, WMH07N65C2, 3N155

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