All MOSFET. ME7170-G Datasheet


ME7170-G MOSFET. Datasheet pdf. Equivalent

Type Designator: ME7170-G

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 56 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.2 V

Maximum Drain Current |Id|: 110 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 102 nC

Rise Time (tr): 21 nS

Drain-Source Capacitance (Cd): 514 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0026 Ohm

Package: PowerDFN5x6

ME7170-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search


ME7170-G Datasheet (PDF)

1.1. me7170-g.pdf Size:1295K _update-mosfet


ME7170-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7170-G is the N-Channel logic enhancement mode power ● RDS(ON)≦2.6mΩ@VGS=10V field effect transistors are produced using high cell density , DMOS ● RDS(ON)≦3.9mΩ@VGS=4.5V trench technology. This high density process is especially tailored to ● Super high density cell design for extremely lo

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