ME7170-G Datasheet and Replacement
Type Designator: ME7170-G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 110 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 514 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
Package: POWERDFN5X6
ME7170-G substitution
ME7170-G Datasheet (PDF)
me7170-g.pdf

ME7170-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7170-G is the N-Channel logic enhancement mode power RDS(ON)2.6m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)3.9m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely lo
me7170-g.pdf

ME7170-G N-Channel 30V(D-S) Enhancement MOSFETGENERAL DESCRIPTION FEATURES The ME7170-G is the N-Channel logic enhancement mode power RDS(ON)2.6m@VGS=10Vfield effect transistors are produced using high cell density , DMOS RDS(ON)3.9m@VGS=4.5Vtrench technology. This high density process is especially tailored to Super high density cell design for extremely low R
me7170.pdf

ME7170-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7170-G is the N-Channel logic enhancement mode power RDS(ON)2.6m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)3.9m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely lo
Datasheet: HY1707P , HY1707M , HY1707B , HY1707I , HY1707MF , HY1707PS , HY1707PM , LTP70N06 , IRF840 , TP0610T , WML07N65C2 , WMM07N65C2 , WMO07N65C2 , WMP07N65C2 , WMG07N65C2 , WMH07N65C2 , 3N155 .
History: CEB02N9 | J203 | STD10PF06-1
Keywords - ME7170-G MOSFET datasheet
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History: CEB02N9 | J203 | STD10PF06-1



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