All MOSFET. ME7170-G Datasheet

 

ME7170-G Datasheet and Replacement


   Type Designator: ME7170-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 110 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 514 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
   Package: POWERDFN5X6
      - MOSFET Cross-Reference Search

 

ME7170-G Datasheet (PDF)

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ME7170-G

ME7170-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7170-G is the N-Channel logic enhancement mode power RDS(ON)2.6m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)3.9m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely lo

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ME7170-G

ME7170-G N-Channel 30V(D-S) Enhancement MOSFETGENERAL DESCRIPTION FEATURES The ME7170-G is the N-Channel logic enhancement mode power RDS(ON)2.6m@VGS=10Vfield effect transistors are produced using high cell density , DMOS RDS(ON)3.9m@VGS=4.5Vtrench technology. This high density process is especially tailored to Super high density cell design for extremely low R

 8.1. Size:1344K  1
 me7170.pdf pdf_icon

ME7170-G

ME7170-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7170-G is the N-Channel logic enhancement mode power RDS(ON)2.6m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)3.9m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely lo

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: NCEP01T11D | RW1C020UN | IRF441 | AP9926GEO | GSM3050S | SVF12N60S | STD4N62K3

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