ME7170-G MOSFET. Datasheet pdf. Equivalent
Type Designator: ME7170-G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 56 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.2 V
Maximum Drain Current |Id|: 110 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 102 nC
Rise Time (tr): 21 nS
Drain-Source Capacitance (Cd): 514 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0026 Ohm
Package: PowerDFN5x6
ME7170-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME7170-G Datasheet (PDF)
1.1. me7170-g.pdf 
Size:1295K _update-mosfet
ME7170-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7170-G is the N-Channel logic enhancement mode power ● RDS(ON)≦2.6mΩ@VGS=10V field effect transistors are produced using high cell density , DMOS ● RDS(ON)≦3.9mΩ@VGS=4.5V trench technology. This high density process is especially tailored to ● Super high density cell design for extremely lo
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