3SK300 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

High Frequency FETs 3SK2853SK303(Tentative), 3SK307(Tentative)Silicon N-Channel MOS+0.23SK303 2.8 0.3 Unit : mmFor VHF amplification +0.20.65 0.15 1.5 0.3 0.65 0.150.5R Features4 1 Though low voltage operation, performance is equivalent to the con-ventional product.3 2 Downsizing of sets by mini or S-mini type package, and automaticinsertion by taping/magaz

High Frequency FETs 3SK2853SK302(Tentative), 3SK306(Tentative)Silicon N-Channel MOS+0.23SK302 2.8 0.3 Unit : mmFor UHF amplification +0.20.65 0.15 1.5 0.3 0.65 0.150.5R Features4 1 Though low voltage operation, performance is equivalent to the con-ventional product.3 2 Downsizing of sets by mini or S-mini type package, and automaticinsertion by taping/magaz

High Frequency FETs 3SK2853SK304(Tentative), 3SK308(Tentative)Silicon N-Channel MOS+0.23SK304 2.8 0.3 Unit : mmFor UHF amplification +0.20.65 0.15 1.5 0.3 0.65 0.150.5R Features4 1 Though low voltage operation, performance is equivalent to the con-ventional product.3 2 Downsizing of sets by mini or S-mini type package, and automaticinsertion by taping/magaz

High Frequency FETs 3SK2853SK301(Tentative), 3SK305(Tentative)Silicon N-Channel MOS+0.23SK301 2.8 0.3 Unit : mmFor VHF amplification +0.20.65 0.15 1.5 0.3 0.65 0.150.5R Features4 1 Though low voltage operation, performance is equivalent to the con-ventional product.3 2 Downsizing of sets by mini or S-mini type package, and automaticinsertion by taping/magaz