3SK300 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 3SK300

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.15 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 14 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 0.025 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 1.1 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 40 Ohm

Encapsulados: SC61AA

 Búsqueda de reemplazo de 3SK300 MOSFET

- Selecciónⓘ de transistores por parámetros

 

3SK300 datasheet

 ..1. Size:276K  renesas
 3sk300.pdf pdf_icon

3SK300

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.1. Size:25K  panasonic
 3sk303.pdf pdf_icon

3SK300

High Frequency FETs 3SK285 3SK303(Tentative), 3SK307(Tentative) Silicon N-Channel MOS +0.2 3SK303 2.8 0.3 Unit mm For VHF amplification +0.2 0.65 0.15 1.5 0.3 0.65 0.15 0.5R Features 4 1 Though low voltage operation, performance is equivalent to the con- ventional product. 3 2 Downsizing of sets by mini or S-mini type package, and automatic insertion by taping/magaz

 9.2. Size:25K  panasonic
 3sk302.pdf pdf_icon

3SK300

High Frequency FETs 3SK285 3SK302(Tentative), 3SK306(Tentative) Silicon N-Channel MOS +0.2 3SK302 2.8 0.3 Unit mm For UHF amplification +0.2 0.65 0.15 1.5 0.3 0.65 0.15 0.5R Features 4 1 Though low voltage operation, performance is equivalent to the con- ventional product. 3 2 Downsizing of sets by mini or S-mini type package, and automatic insertion by taping/magaz

 9.3. Size:25K  panasonic
 3sk304.pdf pdf_icon

3SK300

High Frequency FETs 3SK285 3SK304(Tentative), 3SK308(Tentative) Silicon N-Channel MOS +0.2 3SK304 2.8 0.3 Unit mm For UHF amplification +0.2 0.65 0.15 1.5 0.3 0.65 0.15 0.5R Features 4 1 Though low voltage operation, performance is equivalent to the con- ventional product. 3 2 Downsizing of sets by mini or S-mini type package, and automatic insertion by taping/magaz

MOSTRAR MÁS

Otros transistores... 3SK195, 3SK263, 3SK264, 3SK295, 3SK296, 3SK297, 3SK298, 3SK299, 2SK3878, 3SK317, 3SK319, 3SK323, MSAFX40N30A, 40P03, 4AK17, 4N60A, 4N60AF