All MOSFET. 3SK300 Datasheet

 

3SK300 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 3SK300
   Marking Code: ZR-
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 14 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.2 V
   |Id|ⓘ - Maximum Drain Current: 0.025 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 1.1 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 40 Ohm
   Package: SC61AA

 3SK300 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

3SK300 Datasheet (PDF)

 ..1. Size:276K  renesas
 3sk300.pdf

3SK300 3SK300

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.1. Size:25K  panasonic
 3sk303.pdf

3SK300

High Frequency FETs 3SK2853SK303(Tentative), 3SK307(Tentative)Silicon N-Channel MOS+0.23SK303 2.8 0.3 Unit : mmFor VHF amplification +0.20.65 0.15 1.5 0.3 0.65 0.150.5R Features4 1 Though low voltage operation, performance is equivalent to the con-ventional product.3 2 Downsizing of sets by mini or S-mini type package, and automaticinsertion by taping/magaz

 9.2. Size:25K  panasonic
 3sk302.pdf

3SK300

High Frequency FETs 3SK2853SK302(Tentative), 3SK306(Tentative)Silicon N-Channel MOS+0.23SK302 2.8 0.3 Unit : mmFor UHF amplification +0.20.65 0.15 1.5 0.3 0.65 0.150.5R Features4 1 Though low voltage operation, performance is equivalent to the con-ventional product.3 2 Downsizing of sets by mini or S-mini type package, and automaticinsertion by taping/magaz

 9.3. Size:25K  panasonic
 3sk304.pdf

3SK300

High Frequency FETs 3SK2853SK304(Tentative), 3SK308(Tentative)Silicon N-Channel MOS+0.23SK304 2.8 0.3 Unit : mmFor UHF amplification +0.20.65 0.15 1.5 0.3 0.65 0.150.5R Features4 1 Though low voltage operation, performance is equivalent to the con-ventional product.3 2 Downsizing of sets by mini or S-mini type package, and automaticinsertion by taping/magaz

 9.4. Size:25K  panasonic
 3sk301.pdf

3SK300

High Frequency FETs 3SK2853SK301(Tentative), 3SK305(Tentative)Silicon N-Channel MOS+0.23SK301 2.8 0.3 Unit : mmFor VHF amplification +0.20.65 0.15 1.5 0.3 0.65 0.150.5R Features4 1 Though low voltage operation, performance is equivalent to the con-ventional product.3 2 Downsizing of sets by mini or S-mini type package, and automaticinsertion by taping/magaz

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: STB75NF75

 

 
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