3SK300 Specs and Replacement

Type Designator: 3SK300

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 14 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.025 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 1.1 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 40 Ohm

Package: SC61AA

3SK300 substitution

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3SK300 datasheet

 ..1. Size:276K  renesas
 3sk300.pdf pdf_icon

3SK300

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 9.1. Size:25K  panasonic
 3sk303.pdf pdf_icon

3SK300

High Frequency FETs 3SK285 3SK303(Tentative), 3SK307(Tentative) Silicon N-Channel MOS +0.2 3SK303 2.8 0.3 Unit mm For VHF amplification +0.2 0.65 0.15 1.5 0.3 0.65 0.15 0.5R Features 4 1 Though low voltage operation, performance is equivalent to the con- ventional product. 3 2 Downsizing of sets by mini or S-mini type package, and automatic insertion by taping/magaz... See More ⇒

 9.2. Size:25K  panasonic
 3sk302.pdf pdf_icon

3SK300

High Frequency FETs 3SK285 3SK302(Tentative), 3SK306(Tentative) Silicon N-Channel MOS +0.2 3SK302 2.8 0.3 Unit mm For UHF amplification +0.2 0.65 0.15 1.5 0.3 0.65 0.15 0.5R Features 4 1 Though low voltage operation, performance is equivalent to the con- ventional product. 3 2 Downsizing of sets by mini or S-mini type package, and automatic insertion by taping/magaz... See More ⇒

 9.3. Size:25K  panasonic
 3sk304.pdf pdf_icon

3SK300

High Frequency FETs 3SK285 3SK304(Tentative), 3SK308(Tentative) Silicon N-Channel MOS +0.2 3SK304 2.8 0.3 Unit mm For UHF amplification +0.2 0.65 0.15 1.5 0.3 0.65 0.15 0.5R Features 4 1 Though low voltage operation, performance is equivalent to the con- ventional product. 3 2 Downsizing of sets by mini or S-mini type package, and automatic insertion by taping/magaz... See More ⇒

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Detailed specifications: 3SK195, 3SK263, 3SK264, 3SK295, 3SK296, 3SK297, 3SK298, 3SK299, 2SK3878, 3SK317, 3SK319, 3SK323, MSAFX40N30A, 40P03, 4AK17, 4N60A, 4N60AF

Keywords - 3SK300 MOSFET specs

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