Справочник MOSFET. 3SK300

 

3SK300 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 3SK300
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.15 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 14 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.025 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Cossⓘ - Выходная емкость: 1.1 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 40 Ohm
   Тип корпуса: SC61AA

 Аналог (замена) для 3SK300

 

 

3SK300 Datasheet (PDF)

 ..1. Size:276K  renesas
 3sk300.pdf

3SK300 3SK300

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.1. Size:25K  panasonic
 3sk303.pdf

3SK300

High Frequency FETs 3SK2853SK303(Tentative), 3SK307(Tentative)Silicon N-Channel MOS+0.23SK303 2.8 0.3 Unit : mmFor VHF amplification +0.20.65 0.15 1.5 0.3 0.65 0.150.5R Features4 1 Though low voltage operation, performance is equivalent to the con-ventional product.3 2 Downsizing of sets by mini or S-mini type package, and automaticinsertion by taping/magaz

 9.2. Size:25K  panasonic
 3sk302.pdf

3SK300

High Frequency FETs 3SK2853SK302(Tentative), 3SK306(Tentative)Silicon N-Channel MOS+0.23SK302 2.8 0.3 Unit : mmFor UHF amplification +0.20.65 0.15 1.5 0.3 0.65 0.150.5R Features4 1 Though low voltage operation, performance is equivalent to the con-ventional product.3 2 Downsizing of sets by mini or S-mini type package, and automaticinsertion by taping/magaz

 9.3. Size:25K  panasonic
 3sk304.pdf

3SK300

High Frequency FETs 3SK2853SK304(Tentative), 3SK308(Tentative)Silicon N-Channel MOS+0.23SK304 2.8 0.3 Unit : mmFor UHF amplification +0.20.65 0.15 1.5 0.3 0.65 0.150.5R Features4 1 Though low voltage operation, performance is equivalent to the con-ventional product.3 2 Downsizing of sets by mini or S-mini type package, and automaticinsertion by taping/magaz

 9.4. Size:25K  panasonic
 3sk301.pdf

3SK300

High Frequency FETs 3SK2853SK301(Tentative), 3SK305(Tentative)Silicon N-Channel MOS+0.23SK301 2.8 0.3 Unit : mmFor VHF amplification +0.20.65 0.15 1.5 0.3 0.65 0.150.5R Features4 1 Though low voltage operation, performance is equivalent to the con-ventional product.3 2 Downsizing of sets by mini or S-mini type package, and automaticinsertion by taping/magaz

Другие MOSFET... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

 

 
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