3SK300 - описание и поиск аналогов

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

High Frequency FETs 3SK285 3SK303(Tentative), 3SK307(Tentative) Silicon N-Channel MOS +0.2 3SK303 2.8 0.3 Unit mm For VHF amplification +0.2 0.65 0.15 1.5 0.3 0.65 0.15 0.5R Features 4 1 Though low voltage operation, performance is equivalent to the con- ventional product. 3 2 Downsizing of sets by mini or S-mini type package, and automatic insertion by taping/magaz

High Frequency FETs 3SK285 3SK302(Tentative), 3SK306(Tentative) Silicon N-Channel MOS +0.2 3SK302 2.8 0.3 Unit mm For UHF amplification +0.2 0.65 0.15 1.5 0.3 0.65 0.15 0.5R Features 4 1 Though low voltage operation, performance is equivalent to the con- ventional product. 3 2 Downsizing of sets by mini or S-mini type package, and automatic insertion by taping/magaz

High Frequency FETs 3SK285 3SK304(Tentative), 3SK308(Tentative) Silicon N-Channel MOS +0.2 3SK304 2.8 0.3 Unit mm For UHF amplification +0.2 0.65 0.15 1.5 0.3 0.65 0.15 0.5R Features 4 1 Though low voltage operation, performance is equivalent to the con- ventional product. 3 2 Downsizing of sets by mini or S-mini type package, and automatic insertion by taping/magaz

High Frequency FETs 3SK285 3SK301(Tentative), 3SK305(Tentative) Silicon N-Channel MOS +0.2 3SK301 2.8 0.3 Unit mm For VHF amplification +0.2 0.65 0.15 1.5 0.3 0.65 0.15 0.5R Features 4 1 Though low voltage operation, performance is equivalent to the con- ventional product. 3 2 Downsizing of sets by mini or S-mini type package, and automatic insertion by taping/magaz