50N06F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 50N06F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 130 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 30 nC
   trⓘ - Tiempo de subida: 100 nS
   Cossⓘ - Capacitancia de salida: 430 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
   Paquete / Cubierta: TO-251

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50N06F Datasheet (PDF)

..1. Size:418K nell
50n06a 50n06af 50n06f 50n06g.pdf

RoHS 50N06 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(50A, 60Volts)DESCRIPTIOND The Nell 50N06 is a three-terminal silicon Ddevice with current conduction capabilityof 50A, fast switching speed, low on-stateresistance, breakdown voltage rating of 60V,and max. threshold voltage of 4 volts.GS They are designed for use in applications

..2. Size:521K chongqing pingwei
50n06 50n06f 50n06b 50n06h 50n06g 50n06d.pdf

50N06(F,B,H,G,D)50 Amps,60 Volts N-CHANNEL MOSFETFEATURE 50A,60V,R =17.5m@VGS=10V/25ADS(ON)MAXR =20m@VGS=4.5V/25ADS(ON)MAX Low gate charge Low CissTO-220AB ITO-220AB TO-262 Fast switching 100% avalanche tested 50N06 50N06F 50N06H Improved dv/dt capabilityTO-263 TO-252 TO-25150N06B 50N06G 50N06DAbsolute Maximum Ratings(T =25,unless otherwi

0.1. Size:1067K rohm
rsd050n06fra.pdf

Data SheetAEC-Q101 Qualified4V Drive Nch MOSFET RSD050N06FRAStructure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT3 (SC-63) Features1) Low on-resistance.2) Fast switching speed. 3) Drive circuits can be simple. 9 3) Parallel use is easy. ApplicationsSwitchingPackaging specif

0.2. Size:1006K rohm
rsd150n06fra.pdf

Data SheetAEC-Q101 Qualified4V Drive Nch MOSFET RSD150N06FRAStructure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT3 (SC-63) Features1) Low on-resistance.2) Fast switching speed. 3) Drive circuits can be simple. 9 4) Parallel use is easy. ApplicationsSwitchingPackaging spec

0.3. Size:40K omnirel
oms150n06f.pdf

OMS150N06FL OMS60L60FLPreliminary Data SheetOMS120N10FL OMS50F60FLH-BRIDGE, MULTI-CHIP MODULES IN ANINDUSTRIAL ISOLATED PACKAGE60 To 600 Volt, 50 To 150 Amp Modules,H-Bridge ConfigurationFEATURES Isolated Heat Sink Low Inductance Design Fast Switching Speed Low On Voltage Easy-To-Connect To PackageDESCRIPTIONThese modules are ideally suited for high d

0.4. Size:1911K jilin sino
jcs50n06vh jcs50n06rh jcs50n06ch jcs50n06fh.pdf

N RN-CHANNEL MOSFET JCS50N06H Package MAIN CHARACTERISTICS ID 50 A VDSS 60 V Rdson-max 23 m @Vgs=10V Qg-typ 34 nC APPLICATIONS High frequency switch UPS mode power supplies UPS FEATURES Low gate charge

0.5. Size:499K convert
cs50n06f cs50n06p cs50n06u cs50n06d.pdf

nvertSuzhou Convert Semiconductor Co ., Ltd.CS50N06F,CS50N06P,CS50N06U,CS50N06D60V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS50N06F TO-

0.6. Size:225K inchange semiconductor
50n06fi.pdf

isc N-Channel MOSFET Transistor 50N06FIDESCRIPTIONDrain Current I =27A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 28m(Max)DS(on)Fast Switching SpeedLow Drive RequirementMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current , high speed switchingSwitc

Otros transistores... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

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