50N06F
MOSFET. Datasheet pdf. Equivalent
Type Designator: 50N06F
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 130
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 50
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 30
nC
trⓘ - Rise Time: 100
nS
Cossⓘ -
Output Capacitance: 430
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022
Ohm
Package:
TO-251
50N06F
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
50N06F
Datasheet (PDF)
..1. Size:418K nell
50n06a 50n06af 50n06f 50n06g.pdf 
RoHS 50N06 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(50A, 60Volts)DESCRIPTIOND The Nell 50N06 is a three-terminal silicon Ddevice with current conduction capabilityof 50A, fast switching speed, low on-stateresistance, breakdown voltage rating of 60V,and max. threshold voltage of 4 volts.GS They are designed for use in applications
..2. Size:521K chongqing pingwei
50n06 50n06f 50n06b 50n06h 50n06g 50n06d.pdf
50N06(F,B,H,G,D)50 Amps,60 Volts N-CHANNEL MOSFETFEATURE 50A,60V,R =17.5m@VGS=10V/25ADS(ON)MAXR =20m@VGS=4.5V/25ADS(ON)MAX Low gate charge Low CissTO-220AB ITO-220AB TO-262 Fast switching 100% avalanche tested 50N06 50N06F 50N06H Improved dv/dt capabilityTO-263 TO-252 TO-25150N06B 50N06G 50N06DAbsolute Maximum Ratings(T =25,unless otherwi
0.1. Size:1067K rohm
rsd050n06fra.pdf
Data SheetAEC-Q101 Qualified4V Drive Nch MOSFET RSD050N06FRAStructure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT3 (SC-63) Features1) Low on-resistance.2) Fast switching speed. 3) Drive circuits can be simple. 9 3) Parallel use is easy. ApplicationsSwitchingPackaging specif
0.2. Size:1006K rohm
rsd150n06fra.pdf
Data SheetAEC-Q101 Qualified4V Drive Nch MOSFET RSD150N06FRAStructure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT3 (SC-63) Features1) Low on-resistance.2) Fast switching speed. 3) Drive circuits can be simple. 9 4) Parallel use is easy. ApplicationsSwitchingPackaging spec
0.3. Size:40K omnirel
oms150n06f.pdf
OMS150N06FL OMS60L60FLPreliminary Data SheetOMS120N10FL OMS50F60FLH-BRIDGE, MULTI-CHIP MODULES IN ANINDUSTRIAL ISOLATED PACKAGE60 To 600 Volt, 50 To 150 Amp Modules,H-Bridge ConfigurationFEATURES Isolated Heat Sink Low Inductance Design Fast Switching Speed Low On Voltage Easy-To-Connect To PackageDESCRIPTIONThese modules are ideally suited for high d
0.4. Size:1911K jilin sino
jcs50n06vh jcs50n06rh jcs50n06ch jcs50n06fh.pdf
N RN-CHANNEL MOSFET JCS50N06H Package MAIN CHARACTERISTICS ID 50 A VDSS 60 V Rdson-max 23 m @Vgs=10V Qg-typ 34 nC APPLICATIONS High frequency switch UPS mode power supplies UPS FEATURES Low gate charge
0.5. Size:499K convert
cs50n06f cs50n06p cs50n06u cs50n06d.pdf
nvertSuzhou Convert Semiconductor Co ., Ltd.CS50N06F,CS50N06P,CS50N06U,CS50N06D60V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS50N06F TO-
0.6. Size:225K inchange semiconductor
50n06fi.pdf
isc N-Channel MOSFET Transistor 50N06FIDESCRIPTIONDrain Current I =27A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 28m(Max)DS(on)Fast Switching SpeedLow Drive RequirementMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current , high speed switchingSwitc
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