MSAFX50N20A Todos los transistores

 ..1. Size:161K  microsemi
 msafx50n20a.pdf

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Tel +353 (0) 65 6840044 Fax +353 (0) 65 6822298 Website http //www.microsemi.com N-Channel Enhancement Mode Power Mosfet DEVICES MSAFX50N20A 200 Volts 50 Amps 45 m FEATURES Ultrafast body diode Rugged poly

 9.1. Size:33K  microsemi
 msafx76n07a.pdf

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 FAX (714) 966-5256 MSAFX76N07A Features 70 Volts Ultrafast body diode 76 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability 12 m Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance N-CHANNEL

 9.2. Size:37K  microsemi
 10n90a msafx10n90a.pdf

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 FAX (714) 966-5256 MSAFX10N90A Features 900 Volts Ultrafast body diode 10 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability 1.1 Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance N-CHANNEL Rev

 9.3. Size:34K  microsemi
 20n60a msafx20n60a.pdf

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 FAX (714) 966-5256 MSAFX20N60A Features 600 Volts Ultrafast body diode 20 Amps Rugged polysilicon gate cell structure 350 m Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance N-CHANNEL Very low thermal resistance

 9.4. Size:34K  microsemi
 msafx75n10a.pdf

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 FAX (714) 966-5256 MSAFX75N10A Features 100 Volts Ultrafast body diode 75 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability 20 m Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance N-CHANNEL

 9.5. Size:44K  microsemi
 msafx11p50a.pdf

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 FAX (714) 966-5256 MSAFX11P50A Features 500 Volts High voltage p-channel power mosfet; complements MSAFX24N50A Ultrafast body diode 11 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability 750 m Hermetically sealed, surface mount power package

 9.6. Size:34K  microsemi
 msafx40n30a.pdf

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 FAX (714) 966-5256 MSAFX40N30A Features 300 Volts Ultrafast body diode 40 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability 85 m Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance N-CHANNEL