MSAFX50N20A PDF and Equivalents Search

 

MSAFX50N20A Specs and Replacement


   Type Designator: MSAFX50N20A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 500 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: COOLPACK2
 

 MSAFX50N20A substitution

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MSAFX50N20A datasheet

 ..1. Size:161K  microsemi
msafx50n20a.pdf pdf_icon

MSAFX50N20A

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Tel +353 (0) 65 6840044 Fax +353 (0) 65 6822298 Website http //www.microsemi.com N-Channel Enhancement Mode Power Mosfet DEVICES MSAFX50N20A 200 Volts 50 Amps 45 m FEATURES Ultrafast body diode Rugged poly... See More ⇒

 9.1. Size:33K  microsemi
msafx76n07a.pdf pdf_icon

MSAFX50N20A

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 FAX (714) 966-5256 MSAFX76N07A Features 70 Volts Ultrafast body diode 76 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability 12 m Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance N-CHANNEL ... See More ⇒

 9.2. Size:37K  microsemi
10n90a msafx10n90a.pdf pdf_icon

MSAFX50N20A

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 FAX (714) 966-5256 MSAFX10N90A Features 900 Volts Ultrafast body diode 10 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability 1.1 Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance N-CHANNEL Rev... See More ⇒

 9.3. Size:34K  microsemi
20n60a msafx20n60a.pdf pdf_icon

MSAFX50N20A

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 FAX (714) 966-5256 MSAFX20N60A Features 600 Volts Ultrafast body diode 20 Amps Rugged polysilicon gate cell structure 350 m Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance N-CHANNEL Very low thermal resistance... See More ⇒

Detailed specifications: 4N60G , 4N80A , 4N80AF , 50N02 , 50N06A , 50N06AF , 50N06F , 50N06G , IRF1010E , 50N30C , 5HB03N8 , 5N20V , 5N60A , 5N60AF , 5N60G , 5N65A , 5N65AF .

History: AGM13T30A | CJ3401 | RFD16N05L | AGM16N10C | BSS138LT1G | IRF3707ZCSPBF | TK8P60W5

Keywords - MSAFX50N20A MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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