All MOSFET. MSAFX50N20A Datasheet

 

MSAFX50N20A Datasheet and Replacement


   Type Designator: MSAFX50N20A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 500 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: COOLPACK2
 

 MSAFX50N20A substitution

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MSAFX50N20A Datasheet (PDF)

 ..1. Size:161K  microsemi
 msafx50n20a.pdf pdf_icon

MSAFX50N20A

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com N-Channel Enhancement Mode Power Mosfet DEVICES MSAFX50N20A 200 Volts50 Amps45 m FEATURES Ultrafast body diode Rugged poly

 9.1. Size:33K  microsemi
 msafx76n07a.pdf pdf_icon

MSAFX50N20A

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220FAX: (714) 966-5256MSAFX76N07AFeatures70 Volts Ultrafast body diode76 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability12 m Hermetically sealed, surface mount power package Low package inductance Very low thermal resistanceN-CHANNEL

 9.2. Size:37K  microsemi
 10n90a msafx10n90a.pdf pdf_icon

MSAFX50N20A

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220FAX: (714) 966-5256 MSAFX10N90AFeatures900 Volts Ultrafast body diode10 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability1.1 Hermetically sealed, surface mount power package Low package inductance Very low thermal resistanceN-CHANNEL Rev

 9.3. Size:34K  microsemi
 20n60a msafx20n60a.pdf pdf_icon

MSAFX50N20A

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220FAX: (714) 966-5256MSAFX20N60AFeatures600 Volts Ultrafast body diode 20 Amps Rugged polysilicon gate cell structure350 m Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductanceN-CHANNEL Very low thermal resistance

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Datasheet: 4N60G , 4N80A , 4N80AF , 50N02 , 50N06A , 50N06AF , 50N06F , 50N06G , IRF530 , 50N30C , 5HB03N8 , 5N20V , 5N60A , 5N60AF , 5N60G , 5N65A , 5N65AF .

History: SUB65P04-15 | CJ3406 | DH009N02P | 50N06A | GSM4925WS | YJQ40P03A | SPC4N65G

Keywords - MSAFX50N20A MOSFET datasheet

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