6N60G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 6N60G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 55 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 70 nS

Cossⓘ - Capacitancia de salida: 95 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm

Encapsulados: TO-252

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6N60G datasheet

 ..1. Size:457K  nell
 6n60a 6n60af 6n60f 6n60g.pdf pdf_icon

6N60G

RoHS 6N60 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (6A, 600Volts) DESCRIPTION The Nell 6N60 is a three-terminal silicon D D device with current conduction capability of 6A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. G They are designed for use in applications such

 0.1. Size:1147K  infineon
 skb06n60g.pdf pdf_icon

6N60G

SKB06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners NPT-Technology for 600V applications offers - very tight

 0.2. Size:340K  infineon
 sgp06n60 sgd06n60g.pdf pdf_icon

6N60G

SGP06N60 SGD06N60 Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation combined with low conduction losses C Short circuit withstand time 10 s Designed for - Motor controls G E - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-252

 0.3. Size:443K  silikron
 ssf6n60g.pdf pdf_icon

6N60G

SSF6N60G Main Product Characteristics VDSS 600V RDS(on) 1.32 (typ.) ID 6A TO-251 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

MOSTRAR MÁS

Otros transistores... 65N06H, 6680A, 6HP04CH, 6HP04MH, 6LN04SS, 6N60A, 6N60AF, 6N60F, 20N50, 6N80A, 6N80AF, 6N90A, 6N90AF, 75N08, 75N10A, 75N10B, MSAFA75N10C