6N60G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 6N60G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 55 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 20 nC
   trⓘ - Tiempo de subida: 70 nS
   Cossⓘ - Capacitancia de salida: 95 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
   Paquete / Cubierta: TO-252

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6N60G Datasheet (PDF)

..1. Size:457K nell
6n60a 6n60af 6n60f 6n60g.pdf

RoHS 6N60 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(6A, 600Volts)DESCRIPTION The Nell 6N60 is a three-terminal silicon DDdevice with current conduction capabilityof 6A, fast switching speed, low on-stateresistance, breakdown voltage rating of 600V,and max. threshold voltage of 4 volts.G They are designed for use in applications such

0.1. Size:1147K infineon
skb06n60g.pdf

SKB06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners NPT-Technology for 600V applications offers: - very tight

0.2. Size:340K infineon
sgp06n60 sgd06n60g.pdf

SGP06N60 SGD06N60 Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation combined with low conduction losses C Short circuit withstand time 10 s Designed for: - Motor controls GE- Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-252

0.3. Size:443K silikron
ssf6n60g.pdf

SSF6N60G Main Product Characteristics: VDSS 600V RDS(on) 1.32 (typ.) ID 6A TO-251 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

0.4. Size:833K magnachip
mdd6n60grh.pdf

MDD6N60G N-Channel MOSFET 600V, 4.5A, 1.45General Description Features These N-channel MOSFET are produced using advanced VDS = 600V MagnaChips MOSFET Technology, which provides low on- ID = 4.5A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 1.45 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high S

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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