6N60G PDF and Equivalents Search

RoHS 6N60 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (6A, 600Volts) DESCRIPTION The Nell 6N60 is a three-terminal silicon D D device with current conduction capability of 6A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. G They are designed for use in applications such ... See More ⇒

SKB06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners NPT-Technology for 600V applications offers - very tight ... See More ⇒

SGP06N60 SGD06N60 Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation combined with low conduction losses C Short circuit withstand time 10 s Designed for - Motor controls G E - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-252... See More ⇒

SSF6N60G Main Product Characteristics VDSS 600V RDS(on) 1.32 (typ.) ID 6A TO-251 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery ... See More ⇒

MDD6N60G N-Channel MOSFET 600V, 4.5A, 1.45 General Description Features These N-channel MOSFET are produced using advanced VDS = 600V MagnaChip s MOSFET Technology, which provides low on- ID = 4.5A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 1.45 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high S... See More ⇒