6N60G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 6N60G
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 55 W
Предельно допустимое напряжение сток-исток |Uds|: 600 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Максимально допустимый постоянный ток стока |Id|: 6 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 70 ns
Выходная емкость (Cd): 95 pf
Сопротивление сток-исток открытого транзистора (Rds): 1.5 Ohm
Тип корпуса: TO-252
6N60G Datasheet (PDF)
6n60a 6n60af 6n60f 6n60g.pdf
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RoHS 6N60 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(6A, 600Volts)DESCRIPTION The Nell 6N60 is a three-terminal silicon DDdevice with current conduction capabilityof 6A, fast switching speed, low on-stateresistance, breakdown voltage rating of 600V,and max. threshold voltage of 4 volts.G They are designed for use in applications such
skb06n60g.pdf
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SKB06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners NPT-Technology for 600V applications offers: - very tight
sgp06n60 sgd06n60g.pdf
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SGP06N60 SGD06N60 Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation combined with low conduction losses C Short circuit withstand time 10 s Designed for: - Motor controls GE- Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-252
ssf6n60g.pdf
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SSF6N60G Main Product Characteristics: VDSS 600V RDS(on) 1.32 (typ.) ID 6A TO-251 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
mdd6n60grh.pdf
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MDD6N60G N-Channel MOSFET 600V, 4.5A, 1.45General Description Features These N-channel MOSFET are produced using advanced VDS = 600V MagnaChips MOSFET Technology, which provides low on- ID = 4.5A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 1.45 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high S
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .