6N60G. Аналоги и основные параметры

Наименование производителя: 6N60G

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 55 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 6 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 70 ns

Cossⓘ - Выходная емкость: 95 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.5 Ohm

Тип корпуса: TO-252

Аналог (замена) для 6N60G

- подборⓘ MOSFET транзистора по параметрам

 

6N60G даташит

 ..1. Size:457K  nell
 6n60a 6n60af 6n60f 6n60g.pdf pdf_icon

6N60G

RoHS 6N60 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (6A, 600Volts) DESCRIPTION The Nell 6N60 is a three-terminal silicon D D device with current conduction capability of 6A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. G They are designed for use in applications such

 0.1. Size:1147K  infineon
 skb06n60g.pdf pdf_icon

6N60G

SKB06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners NPT-Technology for 600V applications offers - very tight

 0.2. Size:340K  infineon
 sgp06n60 sgd06n60g.pdf pdf_icon

6N60G

SGP06N60 SGD06N60 Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation combined with low conduction losses C Short circuit withstand time 10 s Designed for - Motor controls G E - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-252

 0.3. Size:443K  silikron
 ssf6n60g.pdf pdf_icon

6N60G

SSF6N60G Main Product Characteristics VDSS 600V RDS(on) 1.32 (typ.) ID 6A TO-251 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... 65N06H, 6680A, 6HP04CH, 6HP04MH, 6LN04SS, 6N60A, 6N60AF, 6N60F, 20N50, 6N80A, 6N80AF, 6N90A, 6N90AF, 75N08, 75N10A, 75N10B, MSAFA75N10C