7N90A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 7N90A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 210 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 900 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 80 nS

Cossⓘ - Capacitancia de salida: 140 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.8 Ohm

Encapsulados: TO-220AB

 Búsqueda de reemplazo de 7N90A MOSFET

- Selecciónⓘ de transistores por parámetros

 

7N90A datasheet

 ..1. Size:369K  nell
7n90a 7n90af.pdf pdf_icon

7N90A

RoHS 7N90 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET 7A, 900Volts DESCRIPTION D The Nell 7N90 is a three-terminal silicon device with current conduction capability of 7A, fast switching speed, low on-state resistance, breakdown voltage rating of 900V, and max. threshold voltage of 5 volts. They are designed for use in applications such as G G s

 ..2. Size:234K  inchange semiconductor
7n90a.pdf pdf_icon

7N90A

INCHANGE Semiconductor isc N-Channel Mosfet Transistor 7N90A FEATURES Drain Current I = 7A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching mode power supplies General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 0.1. Size:928K  samsung
ssf7n90a.pdf pdf_icon

7N90A

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 1.247 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Un

 0.2. Size:930K  samsung
ssh7n90a.pdf pdf_icon

7N90A

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 1.247 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Un

Otros transistores... 6N90AF, 75N08, 75N10A, 75N10B, MSAFA75N10C, MSAFX76N07A, 7N60AF, 7N60H, IRF1405, 7N90AF, 8N60H, 8N80A, 8N80AF, 8N80B, MSAEX8P50A, NID9N05ACL, 9N25A