7N90A. Аналоги и основные параметры
Наименование производителя: 7N90A
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 210 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 900 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 80 ns
Cossⓘ - Выходная емкость: 140 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.8 Ohm
Тип корпуса: TO-220AB
Аналог (замена) для 7N90A
- подборⓘ MOSFET транзистора по параметрам
7N90A даташит
7n90a 7n90af.pdf
RoHS 7N90 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET 7A, 900Volts DESCRIPTION D The Nell 7N90 is a three-terminal silicon device with current conduction capability of 7A, fast switching speed, low on-state resistance, breakdown voltage rating of 900V, and max. threshold voltage of 5 volts. They are designed for use in applications such as G G s
7n90a.pdf
INCHANGE Semiconductor isc N-Channel Mosfet Transistor 7N90A FEATURES Drain Current I = 7A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching mode power supplies General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a
ssf7n90a.pdf
Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 1.247 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Un
ssh7n90a.pdf
Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 1.247 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Un
Другие IGBT... 6N90AF, 75N08, 75N10A, 75N10B, MSAFA75N10C, MSAFX76N07A, 7N60AF, 7N60H, IRF1405, 7N90AF, 8N60H, 8N80A, 8N80AF, 8N80B, MSAEX8P50A, NID9N05ACL, 9N25A
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