7N90A MOSFET Datasheet: N-Ch, 900V, 7A. Full specification with pinout and replacement list

7N90A Specs and Replacement

   Type Designator: 7N90A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 210 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
   Package: TO-220AB

7N90A substitution

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7N90A datasheet

..1. Size:369K nell
7n90a 7n90af.pdf pdf_icon

RoHS 7N90 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET 7A, 900Volts DESCRIPTION D The Nell 7N90 is a three-terminal silicon device with current conduction capability of 7A, fast switching speed, low on-state resistance, breakdown voltage rating of 900V, and max. threshold voltage of 5 volts. They are designed for use in applications such as G G s... See More ⇒

..2. Size:234K inchange semiconductor
7n90a.pdf pdf_icon

INCHANGE Semiconductor isc N-Channel Mosfet Transistor 7N90A FEATURES Drain Current I = 7A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching mode power supplies General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒

0.1. Size:928K samsung
ssf7n90a.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 1.247 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Un... See More ⇒

0.2. Size:930K samsung
ssh7n90a.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 1.247 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Un... See More ⇒

Detailed specifications: 6N90AF , 75N08 , 75N10A , 75N10B , MSAFA75N10C , MSAFX76N07A , 7N60AF , 7N60H , IRF1405 , 7N90AF , 8N60H , 8N80A , 8N80AF , 8N80B , MSAEX8P50A , NID9N05ACL , 9N25A .