8N60H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 8N60H
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 150 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 60.5 nS
Cossⓘ - Capacitancia de salida: 105 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
Encapsulados: TO-263
Búsqueda de reemplazo de 8N60H MOSFET
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8N60H datasheet
8n60h.pdf
RoHS 8N60 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (8A, 600Volts) DESCRIPTION The Nell 8N60 is a three-terminal silicon device with current conduction capability of 8A, fast switching speed, low on-state resistance, D breakdown voltage rating of 600V ,and max. threshold voltage of 4 volts. They are designed for use in applications. such as sw
kia8n60h.pdf
7.5A600V N-CHANNELMOSFET 8N60H KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1.Description The KIA8N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switchingtime, lowgate charge, lowon-state resistanceand have ahigh rugged avalanchecharacteristics. This power MOSFET is usually used at high speed switching applications in power supp
tma8n60h tmd8n60h tmu8n60h.pdf
TMA8N60H, TMD8N60H, TMU8N60H Wuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA8N60H TO-
Otros transistores... 75N10A, 75N10B, MSAFA75N10C, MSAFX76N07A, 7N60AF, 7N60H, 7N90A, 7N90AF, IRFZ48N, 8N80A, 8N80AF, 8N80B, MSAEX8P50A, NID9N05ACL, 9N25A, 9N25AF, 9N90B
History: MTP452M3
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