8N60H Datasheet and Replacement
Type Designator: 8N60H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 60.5 nS
Cossⓘ - Output Capacitance: 105 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO-263
8N60H substitution
8N60H Datasheet (PDF)
8n60h.pdf

RoHS 8N60 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(8A, 600Volts)DESCRIPTION The Nell 8N60 is a three-terminal silicon device with current conduction capability of 8A,fast switching speed, low on-state resistance,Dbreakdown voltage rating of 600V ,and max. threshold voltage of 4 volts. They are designed for use in applications. suchas sw
kia8n60h.pdf

7.5A600VN-CHANNELMOSFET8N60HKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThe KIA8N60 is a high voltage MOSFET and is designed to have better characteristics, such as fastswitchingtime, lowgate charge, lowon-state resistanceand have ahigh rugged avalanchecharacteristics.This power MOSFET is usually used at high speed switching applications in power supp
tma8n60h tmd8n60h tmu8n60h.pdf

TMA8N60H, TMD8N60H, TMU8N60H Wuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA8N60H TO-
Datasheet: 75N10A , 75N10B , MSAFA75N10C , MSAFX76N07A , 7N60AF , 7N60H , 7N90A , 7N90AF , RU7088R , 8N80A , 8N80AF , 8N80B , MSAEX8P50A , NID9N05ACL , 9N25A , 9N25AF , 9N90B .
Keywords - 8N60H MOSFET datasheet
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History: CS730FA9H | IRFU110P



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