9N90B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 9N90B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 240 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 120 nS
Cossⓘ - Capacitancia de salida: 175 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
Paquete / Cubierta: TO-3PB
Búsqueda de reemplazo de 9N90B MOSFET
9N90B Datasheet (PDF)
9n90b 9n90c.pdf

RoHS 9N90 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET9A, 900VoltsDESCRIPTIOND The Nell 9N90 is a three-terminal silicon devicewith current conduction capability of 9A, fast switchingspeed, low on-state resistance, breakdown voltagerating of 900V, and max. threshold voltage of 5 volts. They are designed for use in applications such as GGD
9n90b.pdf

9N90B9A 900V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is obtained by the self-alignedVDSS = 900Vplanar technology which reduce the conduction loss, improve switchingI = 9.0ADperformance and enhance the avalanche energy. Which accords with theRoHS standard.RDS(on)TYP)= 920m2 Features Fast switching ESD impr
jcs9n90ft jcs9n90wt jcs9n90abt jcs9n90bt.pdf

N RN-CHANNEL MOSFET JCS9N90T Package MAIN CHARACTERISTICS ID 9 A VDSS 900 V Rdson-Max 1.35 Vgs=10V Qg 43 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED
Otros transistores... 8N60H , 8N80A , 8N80AF , 8N80B , MSAEX8P50A , NID9N05ACL , 9N25A , 9N25AF , 2SK3918 , 9N90C , AMA2N7002 , AMA410N , AMA420N , AMA421P , AMA423P , AMA430N , AMA433P .
History: IRFPS59N60C | 2SK1954 | NTMFS4835N | UTT120N06
History: IRFPS59N60C | 2SK1954 | NTMFS4835N | UTT120N06



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